333 3 VS-10CVH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 5 A FRED Pt FEATURES Base eSMP Series common Hyperfast recovery time cathode 4 175 C max. operating junction temperature Low forward voltage drop reduced Q and sof t rr 44 recovery Low leakage current Very low profile - typical height of 1.3 mm 2 11 Common Ideal for automated placement 22 cathode Polyimide passivation for high reliability standard 1 3 3 Meets MSL level 1, per J-STD-020, LF maximum peak Anode Anode SlimDPAK (TO-252AE) of 260 C Meets JESD 201 class 2 whisker test LINKS TO ADDITIONAL RESOURCES Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3D Models DESCRIPTION / APPLICATIONS State of the art hyper fast recovery rectifiers designed with optimized performance of forward voltage drop, hyper fast PRIMARY CHARACTERISTICS recovery time, and soft recovery. I 2 x 5 A The planar structure and the platinum doped life tim e F(AV) control guarantee the best overall performance, ruggedness V 200 V R and reliability characteristics. V at I 0.74 V F F These devices are intended for use in PFC boost stage in th e t (typ.) 16 ns rr AC/DC section of SMPS inverters or as freewheeling diodes . T max. 175 C J Their extremely optimized stored charge and low recovery Package SlimDPAK (TO-252AE) current minimize the switching losses and reduce Circuit configuration Common cathode over dissipation in the switching element and snubbers. MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 200 V RRM per leg 5 Average rectified forward current I T = 165 C F(AV) C per device 10 A Non-repetitive peak surge current per leg I T = 25 C, 10 ms sine pulse wave 100 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 200 - - BR R R I = 5 A - 0.90 1.04 F I = 10 A - 1.0 1.17 V F Forward voltage V F I = 5 A, T = 150 C - 0.74 0.84 F J I = 10 A, T = 150 C - 0.85 1.05 F J V = V rated - - 4 R R Reverse leakage current per leg I A R T = 150 C, V = V rated - - 80 J R R Junction capacitance per leg C V = 200 V - 17 - pF T R Revision: 11-Jan-2021 Document Number: 96097 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-10CVH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 16 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R RR Reverse recovery time t ns rr T = 25 C -21 - J T = 125 C - 30 - J I = 5 A F T = 25 C - 2.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4 - J V = 160 V R T = 25 C - 25 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1)(2) Thermal resistance, junction to ambient R -7390 thJA C/W (3) Thermal resistance, junction to mount, per diode R -2.12.5 thJM Marking device Case style SlimDPAK (TO-252AE) 10CVH02 Notes (1) The heat generated must be less than thermal conductivity from junction to ambient dP /dT < 1R D J thJA (2) Free air, mounted or recommended copper pad area thermal resistance R - junction to ambient thJA (3) Mounted on infinite heatsink 100 100 175 C 10 150 C 125 C 10 1 T = 175 C J T = -40 C J 100 C 0.1 75 C 1 0.01 50 C T = 150 C J 0.001 T = 125 C J 25 C T = 25 C J 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Jan-2021 Document Number: 96097 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R