VS-10ETF06SLHM3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base Meets MSL level 1, per J-STD-020, LF maximum cathode peak of 245 C + 2 Glass passivated pellet chip junction AEC-Q101 qualified 2 Meets JESD 201 class 1A whisker test 3 Flexible solution for reliable AC power 13 1 rectification Anode -- Anode 2 D PAK (TO-263AB) High surge, low V rugged blocking diode for DC charging F stations Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 10 A APPLICATIONS F(AV) V 600 V R Input rectification V at I 1.2 V F F On-board and off-board EV / HEV battery chargers I 140 A FSM t 50 ns DESCRIPTION rr T max. 150 C J The VS-10ETF06SLHM3 fast soft recovery rectifier series Snap factor 0.6 has been optimized for combined short reverse recovery 2 time and low forward voltage drop. Package D PAK (TO-263AB) Circuit configuration Single The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 600 V RRM I Sinusoidal waveform 10 F(AV) A I 140 FSM t 1 A, 100 A/s 50 ns rr V 10 A, T = 25 C 1.2 V F J T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETF06SLHM3 600 700 2.5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 128 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 115 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 140 10 ms sine pulse, rated V applied 66 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 94 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 940 A s Revision: 22-Feb-18 Document Number: 96485 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10ETF06SLHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 10 A, T = 25 C 1.2 V FM J Forward slope resistance r 12.7 m t T = 150 C J Threshold voltage V 1.25 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 2.5 J RECOVERY CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS I Reverse recovery time t 200 ns FM rr I at 10 A t F pk rr Reverse recovery current I 25 A/s 2.75 A rr t 25 C dir Reverse recovery charge Q 0.32 C rr dt Q rr I Snap factor S 0.6 RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance R DC operation 1.5 thJC junction to case C/W Maximum thermal resistance (1) R 40 thJA junction to ambient (PCB mount) 2g Approximate weight 0.07 oz. 2 Marking device Case style D PAK (TO-263AB) 10ETF06SH Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. Revision: 22-Feb-18 Document Number: 96485 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000