VS-10ETF12SLHM3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base Meets MSL level 1, per J-STD-020, cathode LF maximum peak of 245 C + 2 Glass passivated pellet chip junction AEC-Q101 qualified 2 Meets JESD 201 class 1A whisker test 3 Flexible solution for reliable AC power 1 13 rectification -- 2 Anode Anode D PAK (TO-263AB) High surge, low V rugged blocking diode for DC charging F stations Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 10 A APPLICATIONS F(AV) V 1200 V R Input rectification V at I 1.33 V F F On-board and off-board EV / HEV battery chargers I 155 A FSM t 80 ns DESCRIPTION rr T max. 150 C J The VS-10ETF12SLHM3 fast soft recovery rectifier series 2 Package D PAK (TO-263AB) has been optimized for combined short reverse recovery Circuit configuration Single time and low forward voltage drop. Snap factor 0.6 The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 10 A F(AV) V 1200 V RRM I 155 A FSM V 10 A, T = 25 C 1.33 V F J t 1 A, 100 A/s 80 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETF12SLHM3 1200 1300 4 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 125 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 130 A Maximum peak one cycle non-repetitive RRM I FSM surge current 10 ms sine pulse, no voltage reapplied 155 10 ms sine pulse, rated V applied 85 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 120 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1200 A s Revision: 22-Feb-18 Document Number: 96486 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10ETF12SLHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 10 A, T = 25 C 1.33 V FM J Forward slope resistance r 22.9 m t T = 150 C J Threshold voltage V 0.96 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 4 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time t 310 ns I rr FM I at 10 A t F pk rr Reverse recovery current I 25 A/s 4.7 A rr t 25 C dir Reverse recovery charge Q 1.05 C rr dt Q rr I RM(REC) Typical snap factor S 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 1.5 thJC junction to case C/W Maximum thermal resistance, (1) R 62 thJA junction to ambient (PCB mount) 2g Approximate weight 0.07 oz. 2 Marking device Case style D PAK (TO-263AB) 10ETF12SH Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W Revision: 22-Feb-18 Document Number: 96486 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000