X-On Electronics has gained recognition as a prominent supplier of VS-10ETS08S-M3 Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-10ETS08S-M3 Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

VS-10ETS08S-M3 Vishay

VS-10ETS08S-M3 electronic component of Vishay
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Part No.VS-10ETS08S-M3
Manufacturer: Vishay
Category: Rectifiers
Description: Rectifiers New Input Diodes - D2PAK-e3
Datasheet: VS-10ETS08S-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.426 ea
Line Total: USD 1.43 
Availability - 7926
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7926
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 1.426
10 : USD 0.8188
100 : USD 0.7556
500 : USD 0.7176
1000 : USD 0.7164
25000 : USD 0.698

   
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We are delighted to provide the VS-10ETS08S-M3 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-10ETS08S-M3 and other electronic components in the Rectifiers category and beyond.

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VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 10 A FEATURES Meets MSL level 1, per J-STD-020, LF Base cathode maximum peak of 245 C 2 Glass passivated pellet chip junction Designed and qualified according to 2 JEDEC -JESD 47 1 Material categorization: for definitions of compliance 1 3 3 please see www.vishay.com/doc 99912 Anode Anode 2 D PAK (TO-263AB) APPLICATIONS Input rectification PRIMARY CHARACTERISTICS Vishay switches and output rectifiers which are available I 10 A F(AV) in identical package outlines V 800 V, 1000 V, 1200 V R DESCRIPTION V at I 1.1 V F F I 160 A The VS-10ETS..S-M3 rectifier series has been optimized for FSM very low forward voltage drop, with moderate leakage. The T max. 150 C J 2 glass passivation technology used has reliable operation up Package D PAK (TO-263AB) to 150 C junction temperature. Circuit configuration Single OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 12.0 16.0 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 10 A F(AV) V 800 to 1200 V RRM I 160 A FSM V 10 A, T = 25 C 1.1 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETS08S-M3 800 900 VS-10ETS10S-M3 1000 1100 0.5 VS-10ETS12S-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 135 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated V applied 91 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 130 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1290 A s Revision: 04-Jan-18 Document Number: 94888 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 10 A, T = 25 C 1.1 V FM J Forward slope resistance r 20 m t T = 150 C J Threshold voltage V 0.82 V F(TO) T = 25 C 0.05 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 0.50 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Maximum junction and storage temperature range T , T -40 to +150 C J Stg Maximum thermal resistance, R DC operation 2.5 thJC junction to case C/W Maximum thermal resistance, (1) R 62 thJA junction to ambient (PCB mount) 2g Approximate weight 0.07 oz. 10ETS08S 2 Marking device Case style D PAK (TO-263AB) 10ETS10S 10ETS12S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note AN-994 10ETS.. Series 10ETS.. Series R (DC) = 2.5 C/W R (DC) = 2.5 C/W thJC thJC Conduction angle Conduction period 30 30 60 60 90 90 120 120 180 180 DC 0 2468 10 12 02468 10 12 14 16 18 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 04-Jan-18 Document Number: 94888 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 150 150 140 140 130 130 120 120 110 110 100 100 90 80 90 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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