MUR2X100A12 GeneSiC Semiconductor

MUR2X100A12 V = 1200 V RRM Super Fast Recovery Rectifier I = 200 A Module Type 200 A F(AV) Features High Surge Capability Type 1200 V V RRM Isolation Type Package SOT-227 Package Electrically Isolated Base Plate Not ESD Sensitive Maximum ratings Conditions Parameter Symbol Value Unit Maximum recurrent peak reverse voltage V 1200 V RRM V Maximum DC blocking voltage 1200 V DC Maximum RMS Voltage V 840 V RMS Operating temperature T -55 to 175 C j T Storage temperature -55 to 175 C stg Electrical characteristics at 25 C, unless otherwise specified Parameter Symbol Conditions Value Unit I T = 125 C Average forward current (per pkg) C 200 A F(AV) Peak forward surge current (per leg) I 8.3 ms, half sine 1600 A FSM Maximum instantaneous forward voltage* I = 100 A, T = 25 C V 2.35 V F FM j (per leg) T = 25 C Maximum instantaneous reverse current at 25 j A I R rated DC blocking voltage (per leg) T = 150 C 3 mA j Isolation voltage V A.C. 1 minute 2500 V iSO I =0.5 A, I =1.0 A, I = 0.25 A Maximum reverse recovery time (per leg) t F R RR 125 ns rr Thermal characteristics Maximum thermal resistance junction to case R 0.4 C/W jc (per leg) * Pulse Test: Pulse width 300 s, Duty < 2 % 1 Oct. 2018 MUR2X100A12 2 Oct. 2018