VS-10ETS12SLHM3 www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 10 A FEATURES Meets MSL level 1, per J-STD-020, Base cathode LF maximum peak of 245 C 2 Glass passivated pellet chip junction AEC-Q101 qualified 2 Meets JESD 201 class 1A whisker test 3 Flexible solution for reliable AC power 1 3 1 Anode Anode rectification 2 D PAK (TO-263AB) High surge, low V rugged blocking diode for DC charging F stations Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS APPLICATIONS I 10 A F(AV) Input rectification V 1200 V R On-board and off-board EV / HEV battery chargers V at I 1.1 V F F I 160 A FSM DESCRIPTION T max. 150 C J 2 The VS-10ETS12SLHM3 rectifier series has been optimized Package D PAK (TO-263AB) for very low forward voltage drop, with moderate leakage. Circuit configuration Single OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 12.0 16.0 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 10 A F(AV) V 1200 V RRM I 160 A FSM V 10 A, T = 25 C 1.1 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETS12SLHM3 1200 1300 0.5 Revision: 22-Feb-18 Document Number: 96484 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10ETS12SLHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 135 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated V applied 91 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 130 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1290 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 10 A, T = 25 C 1.1 V FM J Forward slope resistance r 20 m t T = 150 C J Threshold voltage V 0.82 V F(TO) T = 25 C 0.05 J Maximum reverse leakage current I V = rated V mA RM R RRM T = 150 C 0.50 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Maximum junction and storage temperature range T , T -40 to +150 C J Stg Maximum thermal resistance, R DC operation 2.5 thJC junction to case C/W Maximum thermal resistance, (1) R 62 thJA junction to ambient (PCB mount) 2g Approximate weight 0.07 oz. 2 Marking device Case style D PAK (TO-263AB) 10ETS12SH Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. Revision: 22-Feb-18 Document Number: 96484 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000