X-On Electronics has gained recognition as a prominent supplier of VS-10MQ060-M3/5AT Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-10MQ060-M3/5AT Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-10MQ060-M3/5AT Vishay

VS-10MQ060-M3/5AT electronic component of Vishay
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Part No.VS-10MQ060-M3/5AT
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Vishay Semiconductors Schottky Diodes & Rectifiers 1A 60V Single Die Schottky Rectifier
Datasheet: VS-10MQ060-M3/5AT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1057 ea
Line Total: USD 0.53 
Availability - 4990
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
75
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1809
10 : USD 0.121
25 : USD 0.0754

4990
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1057
50 : USD 0.0845
150 : USD 0.074
500 : USD 0.0659
2500 : USD 0.0595
7500 : USD 0.0564

21138
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.319
10 : USD 0.2156
100 : USD 0.1122
1000 : USD 0.0891
7500 : USD 0.0715

7157
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 981
Multiples : 1
981 : USD 0.0928

14550
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 7500
Multiples : 7500
7500 : USD 0.0771

7178
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 286
Multiples : 1
286 : USD 0.1424
500 : USD 0.1247
1000 : USD 0.1078
2000 : USD 0.1032

7275
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 7500
Multiples : 7500
7500 : USD 0.0762
22500 : USD 0.0672

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-10MQ060-M3/5AT from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-10MQ060-M3/5AT and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-10MQ060-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long Cathode Anode term reliability Small foot print, surface mountable High frequency operation DO-214AC (SMA) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Material categorization: for definitions of compliance Package DO-214AC (SMA) please see www.vishay.com/doc 99912 I 1 A F(AV) DESCRIPTION V 60 V R The VS-10MQ060-M3 surface mount Schottky rectifier has V at I 0.57 V F F been designed for applications requiring low forward drop I 7.5 mA at 125 C RM and very small foot prints on PC boards. Typical T max. 150 C J applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and Diode variation Single die reverse battery protection. E 2.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1 A F(AV) V 60 V RRM I t = 5 s sine 40 A FSM p V 1.5 A , T = 125 C 0.63 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10MQ060-M3 UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 50 % duty cycle at T = 120 C, rectangular waveform L 2 On PC board 9 mm island 1.5 (0.013 mm thick copper pad area) Maximum average forward current I A F(AV) See fig. 4 50 % duty cycle at T = 129 C, rectangular waveform L 2 On PC board 9 mm island 1 (0.013 mm thick copper pad area) Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 40 non-repetitive surge current I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 10 See fig. 6 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 4 mH 2.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 20-Jan-15 Document Number: 93351 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10MQ060-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.63 T = 25 C J 1.5 A 0.71 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.57 T = 125 C J 1.5 A 0.63 T = 25 C 0.5 Maximum reverse leakage current J I V = Rated V mA RM R R See fig. 2 T = 125 C 7.5 J Threshold voltage V 0.45 V F(TO) T = T maximum J J Forward slope resistance r 86.8 m t Typical junction capacitance C V = 10 V , T = 25 C, test signal = 1 MHz 31 pF T R DC J Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 80 C/W thJA junction to ambient 0.07 g Approximate weight 0.002 oz. Marking device Case style SMA (similar D-64) 1H Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 20-Jan-15 Document Number: 93351 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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