VS-10RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 10 A FEATURES Improved glass passivation for high reliability and exceptional stability at high temperature High dI /dt and dV/dt capabilities F Standard package Low thermal resistance Metric threads version available TO-48 (TO-208AA) Types up to 1200 V V /V DRM RRM PRIMARY CHARACTERISTICS Designed and qualified for industrial and consumer level I 10 A T(AV) Material categorization: for definitions of compliance 100 V, 200 V, 400 V, 600 V, 800 V, please see www.vishay.com/doc 99912 V /V DRM RRM 1000 V, 1200 V V 1.75 V TYPICAL APPLICATIONS TM I 60 mA GT Medium power switching T -65 C to +125 C J Phase control applications Package TO-48 (TO-208AA) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 10 A I T(AV) T 85 C C I 25 A T(RMS) 50 Hz 225 I A TSM 60 Hz 240 50 Hz 255 2 2 I t A s 60 Hz 233 V /V 100 to 1200 V DRM RRM t Typical 110 s q T -65 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE I /I MAXIMUM DRM RRM RSM DRM RRM TYPE VOLTAGE (1) (2) AND OFF-STATE VOLTAGE PEAK VOLTAGE AT T = T MAXIMUM J J NUMBER CODE V V mA 10 100 150 20 20 200 300 40 400 500 VS-10RIA 60 600 700 10 80 800 900 100 1000 1100 120 1200 1300 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/s (2) For voltage pulses with t 5 ms p Revision: 21-Sep-17 Document Number: 93689 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 10 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 85 C Maximum RMS on-state current I 25 A T(RMS) t = 10 ms 225 No voltage reapplied t = 8.3 ms 240 Maximum peak, one-cycle I A TSM non-repetitive surge current t = 10 ms 190 100 % V RRM reapplied t = 8.3 ms 200 Sinusoidal half wave, initial T =T maximum t = 10 ms J J 255 No voltage reapplied t = 8.3 ms 233 2 2 2 Maximum I t for fusing I t A s t = 10 ms 180 100 % V RRM reapplied t = 8.3 ms 165 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 2550 A s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.10 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.39 T(TO)2 T(AV) J J Low level value of r (16.7 % x x I < I < x I ), T = T maximum 24.3 t1 T(AV) T(AV) J J on-state slope resistance m High level value of r (I > x I ), T = T maximum 16.7 t2 T(AV) J J on-state slope resistance Maximum on-state voltage V I = 32 A, T = 25 C, t = 10 ms sine pulse 1.75 V TM pk J p Maximum holding current I 130 H T = 25 C, anode supply 12 V resistive load mA J Typical latching current I 200 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS V 600 V 200 DRM T = T maximum, V = Rated V J J DM DRM V 800 V 180 Maximum rate of rise DRM dI /dt Gate pulse = 20 V, 15 , t = 6 s, t = 0.1 s maximum A/s F p r of turned-on current V 1000 V 160 DRM I = (2 x rated dI/dt) A TM V 1600 V 150 DRM Typical turn-on time t T = 25 C, at rated V /V , T = 125 C 0.9 gt J DRM RRM J T = T maximum, J J Typical reverse recovery time t 4 rr I = I , t > 200 s, dI /dt = - 10 A/s TM T(AV) p F s T = T maximum, I = I , t > 200 s, V = 100 V, J J TM T(AV) p R Typical turn-off time t dI /dt = - 10 A/s, dV/dt = 20 V/s linear to 67 % V , 110 q F DRM gate bias 0 V to 100 W Note t = 10 s up to 600 V, t = 30 s up to 1600 V available on special request q q BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = T maximum linear to 100 % rated V 100 J J DRM Maximum critical rate of rise dV/dt V/s (1) of off-state voltage = T maximum linear to 67 % rated V 300 T J J DRM Note (1) Available with: dV/dt = 1000 V/s, to complete code add S90 i.e. 10RIA120S90 Revision: 21-Sep-17 Document Number: 93689 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000