VS-10TQ035SPbF, VS-10TQ045SPbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 1 2 D PAK Guard ring for enhanced ruggedness and N/C Anode long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY AEC-Q101 qualified 2 Package D PAK Material categorization: for definitions of compliance I 10 A F(AV) please see www.vishay.com/doc 99912 V 35 V, 40 V, 45 V R DESCRIPTION V at I 0.57 V F F The VS-10TQ...SPbF Schottky rectifier series has been I 15 mA at 125 C RM optimized for low reverse leakage at high temperature. The T max. 175 C J proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are Diode variation Single die in switching power supplies, converters, freewheeling E 13 mJ AS diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 10 A F(AV) V 35/45 V RRM I t = 5 s sine 1050 A FSM p V 10 A , T = 125 C 0.49 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10TQ035SPbF VS-10TQ045SPbF UNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 151 C, rectangular waveform 10 A F(AV) C See fig. 5 Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 1050 non-repetitive surge current I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse 280 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 6.5 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 21-May-14 Document Number: 94121 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10TQ035SPbF, VS-10TQ045SPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 10 A 0.57 T = 25 C J 20 A 0.67 Maximum forward voltage drop (1) V V FM See fig. 1 10 A 0.49 T = 125 C J 20 A 0.61 T = 25 C 2 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 900 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +175 C J Stg temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 2 PAK 10TQ045S Marking device Case style D Revision: 21-May-14 Document Number: 94121 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000