VS-10TTS08-M3
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 10 A
FEATURES
2
Designed and qualified according to
(A)
JEDEC -JESD 47
125 C max. operating junction temperature
Material categorization:
for definitions of compliance please see
1 (K)
(G) 3
www.vishay.com/doc?99912
3L TO-220AB
APPLICATIONS
Typical usage is in input rectification crowbar (soft star)
PRIMARY CHARACTERISTICS
and AC switch in motor control, UPS, welding, and battery
I 6.5 A
T(AV)
charge
V /V 800 V
DRM RRM
V 1.15 V DESCRIPTION
TM
I 15 mA
The VS-10TTS08... high voltage series of silicon controlled
GT
rectifiers are specifically designed for medium power
T -40 C to 125 C
J
switching and phase control applications. The glass
Package 3L TO-220AB
passivation technology used has reliable operation up to
Circuit configuration Single SCR
125 C junction temperature.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter
T = 55 C, T = 125 C, 13.5 17 A
A J
common heatsink of 1 C/W
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I Sinusoidal waveform 6.5
T(AV)
A
I 10
T(RMS)
V /V 800 V
RRM DRM
I 110 A
TSM
V 6.5 A, T = 25 C 1.15 V
T J
dV/dt 150 V/s
dI/dt 100 A/s
T Range -40 to +125 C
J
VOLTAGE RATINGS
V , MAXIMUM PEAK V , MAXIMUM PEAK I /I
RRM DRM RRM DRM
PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C
V V mA
VS-10TTS08-M3 800 800 1.0
Revision: 21-Aug-17 Document Number: 96285
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10TTS08-M3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS
Maximum average on-state current I 6.5
T(AV)
T = 112 C, 180 conduction half sine wave
C
Maximum RMS on-state current I 10
T(RMS)
A
10 ms sine pulse, rated V applied, T = 125 C 95
RRM J
Maximum peak, one-cycle,
I
TSM
non-repetitive surge current
10 ms sine pulse, no voltage reapplied, T = 125 C 110
J
10 ms sine pulse, rated V applied, T = 125 C 45
RRM J
2 2 2
Maximum I t for fusing I t A s
10 ms sine pulse, no voltage reapplied, T = 125 C 64
J
2 2 2
Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied, T = 125 C 640 A s
J
Maximum on-state voltage drop V 6.5 A, T = 25 C 1.15 V
TM J
On-state slope resistance r 17.3 m
t
T = 125 C
J
Threshold voltage V 0.85 V
T(TO)
T = 25 C 0.05
J
Maximum reverse and direct leakage
I /I V = Rated V /V
RM DM R RRM DRM
current
T = 125 C 1.0
J
mA
Anode supply = 6 V, resistive load, initial I = 1 A,
T
Typical holding current I 30
H
T = 25 C
J
Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 50
L J
Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = Open 150 V/s
J J DRM g
Maximum rate of rise of turned-on current dI/dt 100 A/s
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P 8.0
GM
W
Maximum average gate power P 2.0
G(AV)
Maximum peak positive gate current +I 1.5 A
GM
Maximum peak negative gate voltage -V 10 V
GM
Anode supply = 6 V, resistive load, T = - 65 C 20
J
Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 15 mA
GT J
Anode supply = 6 V, resistive load, T = 125 C 10
J
Anode supply = 6 V, resistive load, T = - 65 C 1.2
J
Maximum required DC gate
V Anode supply = 6 V, resistive load, T = 25 C 1
GT J
voltage to trigger
V
Anode supply = 6 V, resistive load, T = 125 C 0.7
J
Maximum DC gate voltage not to trigger V 0.2
GD
T = 125 C, V = Rated value
J DRM
Maximum DC gate current not to trigger I 0.1 mA
GD
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t T = 25 C 0.8
gt J
Typical reverse recovery time t 3 s
rr
T = 125 C
J
Typical turn-off time t 100
q
Revision: 21-Aug-17 Document Number: 96285
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000