333 3 V12P12 www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.51 V at I = 6 A F F FEATURES Available eSMP Series Very low profile - typical height of 1.1 mm Ideal for automated placement K Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation 1 Meets MSL level 1, per J-STD-020, 2 LF maximum peak of 260 C AEC-Q101 qualified available SMPC (TO-277A) - Automotive ordering code base P/NHM3 K Anode 1 Material categorization: for definitions of compliance Anode 2 please see www.vishay.com/doc 99912 Cathode TYPICAL APPLICATIONS ADDITIONAL RESOURCES For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection 3D Models applications. MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMPC (TO-277A) I 12 A F(AV) Molding compound meets UL 94 V-0 flammability rating V 120 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, and I 150 A commercial grade FSM Base P/NHM3 X - halogen-free, RoHS-compliant and E 100 mJ AS AEC-Q101 qualified V at I = 12 A 0.63 V F F ( X denotes revision code e.g. A, B,.....) T max. 150 C J Terminals: matte tin plated leads, solderable per Package SMPC (TO-277A) J-STD-002 and JESD 22-B102 Circuit configuration Single M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V12P12 UNIT Device marking code V1212 Maximum repetitive peak reverse voltage V 120 V RRM Maximum average forward rectified current (fig. 1) I 12 A F(AV) Peak forward surge current 10 ms single half sine-wave I 150 A FSM superimposed on rated load Non-repetitive avalanche energy at I = 2.0 A, L = 50 mH, T = 25 C E 100 mJ AS J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C I 0.5 A p J RRM Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 11-Dec-2019 Document Number: 89094 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V12P12 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 120 (minimum) - V R A BR I = 6 A 0.57 - F T = 25 C A I = 12 A 0.72 0.80 F (1) Instantaneous forward voltage V V F I = 6 A 0.51 - F T = 125 C A I = 12 A 0.63 0.70 F T = 25 C 13 - A A V = 90 V R T = 125 C 7 - mA A (2) Reverse current I R T = 25 C 50 500 A A V = 120 V R T = 125 C 16 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V12P12UNIT (1) R 60 JA Typical thermal resistance C/W R 4 JL Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V12P12-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel V12P12-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) V12P12HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) V12P12HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 11-Dec-2019 Document Number: 89094 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000