333 3 V12P8 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount TMBS (Trench MOS Barrier Schottky) Rectifier Ultra Low V = 0.42 V at I = 6 A F F FEATURES eSMP Series Very low profile - typical height of 1.1 mm Available Ideal for automated placement K Trench MOS Schottky technology Low forward voltage drop, low power losses 1 High efficiency operation 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C SMPC (TO-277A) AEC-Q101 qualified available K Anode 1 - Automotive ordering code base P/NHM3 Anode 2 Material categorization: for definitions of compliance Cathode please see www.vishay.com/doc 99912 ADDITIONAL RESOURCES TYPICAL APPLICATIONS For use in low voltage high frequency inverters, 3D Models freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS MECHANICAL DATA I 12 A F(AV) Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating V 80 V RRM Base P/N-M3 - halogen-free, RoHS-compliant, an d I 200 A FSM commercial grade V at I = 12 A (T = 125 C) 0.54 V F F A Base P/NHM3 X - halogen-free, RoHS-compliant, and T max. 150 C J AEC-Q101 qualified ( X denotes revision code e.g. A, B,.....) Package SMPC (TO-277A) Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V12P8 UNIT Device marking code V128 Maximum repetitive peak reverse voltage V 80 V RRM (1) I 12 F Maximum average forward rectified current (fig. 1) A (2) I 4.3 F Peak forward surge current 10 ms single half sine-wave I 200 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction and storage temperature range T , T -40 to +150 C J STG Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area Revision: 18-Dec-2019 Document Number: 87714 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D V12P8 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 6.0 A 0.49 - F T = 25 C A I = 12 A 0.58 0.66 F (1) Instantaneous forward voltage V V F I = 6.0 A 0.42 - F T = 125 C A I = 12 A 0.54 0.62 F T = 25 C -1 A (2) Reverse current V = 80 V I mA R R T = 125 C 12 30 A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V12P8UNIT (1)(2) R 75 JA Typical thermal resistance C/W (3) R 4 JM Notes (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA (2) Free air mounted on recommended copper pad area thermal resistance R - junction-to-ambient JA (3) Mounted on 30 mm x 30 mm aluminum PCB thermal resistance R - junction-to-mount JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V12P8-M3/86A 0.10 86A 1500 7 diameter plastic tape and reel V12P8-M3/87A 0.10 87A 6500 13 diameter plastic tape and reel (1) V12P8HM3 A/H 0.10 H 1500 7 diameter plastic tape and reel (1) V12P8HM3 A/I 0.10 I 6500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 18-Dec-2019 Document Number: 87714 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000