TM GB20SLT12-247 1200V 20A SiC Schottky MPS Diode Silicon Carbide Schottky Diode VRRM = 1200 V F (T = 135C) I C = 32 A QC = 107 nC Features Package Low V for High Temperature Operation F Case Enhanced Surge and Avalanche Robustness Superior Figure of Merit Q /I C F RoHS Low Thermal Resistance Low Reverse Leakage Current Temperature Independent Fast Switching Posivti e Temperature Coe cient of V F TO-247-2 REACH K A High dV/dt Ruggedness Advantages Applicaonsti Improved System E ciency Power Factor Correction (PFC) High System Reliability Electric Vehicles and Battery Chargers Opmal Pti rice Performance Solar Inverters Reduced Cooling Requirements High Frequency Converters Increased System Power Density Switched Mode Power Supply (SMPS) Zero Reverse Recovery Current Motor Drives Easy to Parallel without Thermal Runaway Anti-P arallel / Free-Wheeling Diode Enables Extremely Fast Switching Inducon Hti eang & ti Welding Absolute Maximum Ratings (At Tc = 25C Unless Otherwise Stated) Parameter Symbol Conditions Values Unit Note Repetitive Peak Reverse Voltage V 1200 V RRM TC = 100C, D = 1 46 Continuous Forward Current I T = 135C, D = 1 32 A Fig. 4 F C T = 157C, D = 1 20 C T = 25C, t = 10 ms 200 Non-Repetitive Peak Forward Surge Current, Half Sine C P I A F,SM Wave T = 150C, t = 10 ms 160 C P TC = 25C, tP = 10 ms 120 Repetitive Peak Forward Surge Current, Half Sine Wave I A F,RM TC = 150C, tP = 10 ms 84 Non-Repetitive Peak Forward Surge Current I T = 25C, t = 10 s 1000 A F,MAX C P 2 2 2 i t Value i dt T = 25C, t = 10 ms 200 A s C P Non-Repetitive Avalanche Energy EAS L = 1.8 mH, IAS = 20 A 360 mJ Diode Ruggedness dV/dt V = 0 ~ 960 V 200 V/ns R Power Dissipation P T = 25C 312 W Fig. 3 TOT C Operating and Storage Temperature Tj , Tstg -55 to 175 C Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247.pdf Page 1 of 7TM GB20SLT12-247 1200V 20A SiC Schottky MPS Diode Electrical Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. I = 20 A, T = 25C 1.5 1.8 F j Diode Forward Voltage VF V Fig. 1 I = 20 A, T = 175C 1.9 F j V = 1200 V, T = 25C 2 10 R j Reverse Current I A Fig. 2 R V = 1200 V, T = 175C 22 R j VR = 400 V 74 Total Capacitive Charge Q nC Fig. 7 C V = 800 V 107 R IF IF,MAX dI /dt = 200 A/s F V = 400 V R Switching Time tS < 10 ns V = 800 V R VR = 1 V, f = 1MHz 1218 Total Capacitance C pF Fig. 6 VR = 800 V, f = 1MHz 71 Thermal/Package Characteristics Values Parameter Symbol Conditions Unit Note Min. Typ. Max. Thermal Resistance, Junction - Case R 0.48 C/W Fig. 9 thJC Weight W 6.0 g T Mounting Torque TM Screws to Heatsink 1.1 Nm Apr. 20 Rev 1.4 www.genesicsemi.com/sic-schottky-mps/GB20SLT12-247/GB20SLT12-247.pdf Page 2 of 7