VS-10TTS08SPbF Series www.vishay.com Vishay Semiconductors Thyristor High Voltage Surface Mount Phase Control SCR, 10 A 2, 4 FEATURES Anode 4 Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Designed and qualified according JEDEC -JESD 47 2 Material categorization: 3 1 3 for definitions of compliance please see Cathode Gate 1 www.vishay.com/doc 99912 2 TO-263AB (D PAK) APPLICATIONS Input rectification (soft start) PRODUCT SUMMARY 2 Vishay input diodes, switches and output rectifiers which Package TO-263AB (D PAK) are available in identical package outlines Diode variation Single SCR I 6.5 A DESCRIPTION T(AV) V /V 800 V The VS-10TTS08SPbF high voltage series of silicon DRM RRM controlled rectifiers are specifically designed for medium V < 1.15 V TM power switching and phase control applications. The glass I 15 mA GT passivation technology used has reliable operation up to T -40 to +125 C J 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G-10 glass fabric-based epoxy 2.5 3.5 with 4 oz. (140 m) copper A Aluminum IMS, R = 15 C/W 6.3 9.5 thCA Aluminum IMS with heatsink, R = 5 C/W 14.0 18.5 thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 6.5 T(AV) A I 10 RMS V /V 800 V RRM DRM I 110 A TSM V 6.5 A, T = 25 C 1.15 V T J dV/dt 150 V/s dI/dt 100 A/s T Range -40 to +125 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM PEAK I /I RRM DRM RRM DRM PART NUMBER PEAK REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-10TTS08SPbF 800 800 1.0 Revision: 08-Jul-15 Document Number: 94562 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10TTS08SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I 6.5 T(AV) T = 112 C, 180 conduction half sine wave C Maximum RMS on-state current I 10 T(RMS) A 10 ms sine pulse, rated V applied, T = 125 C 95 Maximum peak, one-cycle, RRM J I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied, T = 125 C 110 J 10 ms sine pulse, rated V applied, T = 125 C 45 RRM J 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied, T = 125 C 64 J 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied, T = 125 C 640 A s J Maximum on-state voltage drop V 6.5 A, T = 25 C 1.15 V TM J On-state slope resistance r 17.3 m t T = 125 C J Threshold voltage V 0.85 V T(TO) T = 25 C 0.05 J Maximum reverse and direct leakage current I /I V = Rated V /V RM DM R RRM DRM T = 125 C 1.0 J mA Anode supply = 6 V, resistive load, initial I = 1 A, T Typical holding current I 30 H T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 50 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = Open V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 100 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current +I 1.5 A GM Maximum peak negative gate voltage -V 10 V GM Anode supply = 6 V, resistive load, T = - 65 C 20 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 15 mA GT J Anode supply = 6 V, resistive load, T = 125 C 10 J Anode supply = 6 V, resistive load, T = - 65 C 1.2 J Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 1 GT J voltage to trigger V Anode supply = 6 V, resistive load, T = 125 C 0.7 J Maximum DC gate voltage not to trigger V 0.2 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 0.1 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.8 gt J Typical reverse recovery time t 3 s rr T = 125 C J Typical turn-off time t 100 q Revision: 08-Jul-15 Document Number: 94562 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000