VS-110RKI...PbF, VS-111RKI...PbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 110 A FEATURES High current and high surge ratings Hermetic ceramic housing Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-94 (TO-209AC) TYPICAL APPLICATIONS DC motor controls PRIMARY CHARACTERISTICS Controlled DC power supplies I 110 A T(AV) AC controllers V /V 400 V, 800 V, 1200 V DRM RRM V 1.57 V TM I 80 mA GT T -40 C to +140 C J Package TO-94 (TO-209AC) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 110 A I T(AV) T 90 C C I 172 T(RMS) 50 Hz 2080 A I TSM 60 Hz 2180 50 Hz 21.7 2 2 I t kA s 60 Hz 19.8 V /V 400 to 1200 V DRM RRM t Typical 110 s q T -40 to +140 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I /I MAXIMUM DRM RRM RSM DRM RRM TYPE VOLTAGE PEAK AND OFF-STATE VOLTAGE PEAK VOLTAGE AT T = T MAXIMUM J J NUMBER CODE V V mA 40 400 500 VS-110RKI 80 800 900 20 VS-111RKI 120 1200 1300 Revision: 24-Jan-18 Document Number: 94379 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-110RKI...PbF, VS-111RKI...PbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 110 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 90 C Maximum RMS on-state current I DC at 83 C case temperature 172 T(RMS) t = 10 ms 2080 No voltage reapplied t = 8.3 ms 2180 A Maximum peak, one-cycle I TSM non-repetitive surge current t = 10 ms 1750 100 % V RRM reapplied t = 8.3 ms 1830 Sinusoidal half wave, initial T = T maximum J J t = 10 ms 21.7 No voltage reapplied t = 8.3 ms 19.8 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 15.3 100 % V RRM t = 8.3 ms reapplied 14.0 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 217 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.82 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.02 T(TO)2 T(AV) J J Low level value of on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 2.16 t1 T(AV) T(AV) J J m High level value of on-state slope resistance r (I > x I ), T = T maximum 1.70 t2 T(AV) J J Maximum on-state voltage V I = 350 A, T = T maximum, t = 10 ms sine pulse 1.57 V TM pk J J p Maximum holding current I 200 H T = 25 C, anode supply 6 V resistive load mA J Typical latching current I 400 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum non-repetitive rate of Gate drive 20 V, 20 , t 1 s r dI/dt 300 A/s rise of turned-on current T = T maximum, anode voltage 80 % V J J DRM Gate current 1 A, dI /dt = 1 A/s g Typical delay time t 1 d V = 0.67 % V , T = 25 C d DRM J s I = 50 A, T = T maximum, dI/dt = - 5 A/s TM J J Typical turn-off time t 110 q V = 50 V, dV/dt = 20 V/s, gate 0 V 25 R BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum critical rate of rise of dV/dt T = T maximum linear to 80 % rated V 500 V/s J J DRM off-state voltage Maximum peak reverse and I , RRM T = T maximum rated V /V applied 20 mA J J DRM RRM off-state leakage current I DRM Revision: 24-Jan-18 Document Number: 94379 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000