VS-111CNQ045APbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES VS-111CNQ045APbF Base 175 C T operation J common Available cathode Center tap module Available Very low forward voltage drop High frequency operation 12 3 Anode Anode Common High power discrete 1 cathode 2 D-61-8 High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance VS-111CNQ045ASMPbF Guard ring for enhanced ruggedness and long term reliability New fully transfer-mold low profile, small footprint, high 12 3 current package Anode Anode Common 1 cathode 2 Designed and qualified for industrial level Material categorization: For definitions of compliance D-61-8-SM please see www.vishay.com/doc 99912 Note Base VS-111CNQ045ASLPbF * This datasheet provides information about parts that are common cathode RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. 13 Anode Anode DESCRIPTION 1 2 D-61-8-SL The center tap Schottky rectifier module has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical PRODUCT SUMMARY applications are in switching power supplies, converters, Package D-61 freewheeling diodes, and reverse battery protection. I 2 x 55 A F(AV) V 45 V R V at I 0.61 F F I max. 65 mA at 125 C RM T max. 175 C J Diode variation Common cathode E 54 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 110 A F(AV) V 45 V RRM I t = 5 s sine 4000 A FSM p V 55 A , T = 125 C (per leg) 0.55 V F pk J T Range -55 to 175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-111CNQ045APbF UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM Revision: 07-Feb-14 Document Number: 93158 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-111CNQ045APbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 55 forward current I 50 % duty cycle at T = 152 C, rectangular waveform A F(AV) C per device 110 See fig. 5 5 s sine or 3 s rect. pulse Following any rated 4000 Maximum peak one cycle load condition and non-repetitive surge current per leg I A FSM with rated V 10 ms sine or 6 ms rect. pulse RRM 600 See fig. 7 applied Non-repetitive avalanche energy per leg E T = 25 C, I = 8 A, L = 1.7 mH 54 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 8A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 55 A 0.61 T = 25 C J 110 A 0.75 Maximum forward voltage drop per leg (1) V V FM See fig. 1 55 A 0.55 T = 125 C J 110 A 0.69 T = 25 C 1.5 J (1) Maximum reverse leakage current per leg I V = Rated V mA RM R R T = 125 C 65 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 3900 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 55 to 175 C J Stg temperature range Maximum thermal resistance, 0.5 junction to case per leg R DC operation thJC Maximum thermal resistance, 0.25 C/W junction to case per package Typical thermal resistance, Mounting surface, smooth and greased R 0.30 thCS case to heatsink (D-61-8 only) Device flatness < 5 mils 7.8 g Approximate weight 0.28 oz. minimum 40 (35) kgf cm Mounting torque (D-61-8 only) (lbf in) maximum 58 (50) Case style D-61-8 111CNQ045A Marking device Case style D-61-8-SM 111CNQ045ASM Case style D-61-8-SL 111CNQ045ASL Revision: 07-Feb-14 Document Number: 93158 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000