VS-115CNQ015APbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier New Generation 3, D-61 Package, 2 x 55 A FEATURES VS-115CNQ015APbF Base 125 C T operation (V < 5 V) common J R Available cathode Center tap module Available Optimized for OR-ing applications 12 3 Ultralow forward voltage drop Anode Anode Common 1 2 High frequency operation cathode D-61-8 High power discrete Guard ring for enhanced ruggedness and long term VS-115CNQ015ASMPbF reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 12 3 Anode Anode New fully transfer-mold low profile, small footprint, high Common 1 2 cathode current package Designed and qualified for industrial level D-61-8-SM Material categorization: for definitions of compliance Base please see www.vishay.com/doc 99912 VS-115CNQ015ASLPbF common Note cathode * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. 13 Please see the information/tables in this datasheet for details. Anode Anode 1 2 D-61-8-SL DESCRIPTION The center tap Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the PRODUCT SUMMARY OR-ing of parallel power supplies. The proprietary barrier Package D-61-8, D-61-8-SM, D-61-8-SL technology allows for reliable operation up to 125 C I 2 x 55 A F(AV) junction temperature. Typical applications are in parallel V 15 V R switching power supplies, converters, reverse battery V at I 0.37 V protection, and redundant power subsystems. F F I max. 1200 mA at 100 C RM T max. 125 C J Diode variation Common cathode E 54 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 110 A F(AV) V 15 V RRM I t = 5 s sine 5050 A FSM p V 55 A , T = 75 C (per leg) 0.33 V F pk J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOL TEST CONDITIONS VS-115CNQ015APbF UNITS Maximum DC reverse voltage V T = 100 C 15 R J V Maximum working peak reverse voltage V T = 125 C 5 RWM J Revision: 23-May-14 Document Number: 94126 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-115CNQ015APbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 55 forward current I 50 % duty cycle at T = 112 C, rectangular waveform A F(AV) C per device 110 See fig. 5 5 s sine or 3 s rect. pulse Following any rated 5050 Maximum peak one cycle load condition and non-repetitive surge current per leg I A FSM with rated V 10 ms sine or 6 ms rect. pulse RRM 830 See fig. 7 applied Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 4.5 mH 54 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2A AR Frequency limited by T maximum V = 3 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 55 A 0.37 = 25 C T J 110 A 0.46 Maximum forward voltage drop per leg (1) V V FM See fig. 1 55 A 0.33 T = 75 C J 110 A 0.43 T = 25 C 20 J V = Rated V R R T = 100 C 1200 Maximum reverse leakage current per leg J (1) I mA RM See fig. 2 T = 100 C V = 12 V 900 J R T = 100 C V = 5 V 540 J R Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 5500 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -55 to +125 J C Maximum storage temperature range T -55 to +150 Stg Maximum thermal resistance, DC operation 0.5 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.25 C/W junction to case per package Typical thermal resistance, Mounting surface, smooth and greased R 0.30 thCS case to heatsink (D-61-8 only) Device flatness < 5 mils 7.8 g Approximate weight 0.28 oz. minimum 40 (35) Mounting torque kgf cm (D-61-8 only) (lbf in) maximum 58 (50) Case style D-61-8 115CNQ015A Marking device Case style D-61-8-SM 115CNQ015ASM Case style D-61-8-SL 115CNQ015ASL Revision: 23-May-14 Document Number: 94126 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000