ZHCS506QTA Diodes Incorporated

ZHCS506Q SURFACE MOUNT SCHOTTKY BARRIER DIODE Product Summary ( T = +25C) Features and Benefits A V (V) I (mA) V (mV) I (A) High Current Capability (I = 500mA) RRM O F(MAX) R(MAX) O Low V 60 500 630 40 F Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Applications Mechanical Data DC - DC Converters Case: SOT23 Mobile Telecomms Case Material: Molded Plastic, Green Molding Compound. PCMIA UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Weight: 0.0089 grams (Approximate) SOT23 Cathode1 Anode 3 Top View NC 2 Ordering Information (Note 5) Device Packaging Shipping ZHCS506QTA SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See ZHCS506Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Continuous Reverse Voltage V 60 V RRM Continuous Forward Current I 500 mA O Forward Voltage I =500mA V 630 mV F F Average Peak Forward Current D.C. = 50% I 1000 mA FAV t 100s 5.5 A Non Repetitive Forward Current I FSM 2.5 A t 10ms Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation, T = +25C P 330 mW A D Junction Temperature T +125 C J Storage Temperature Range -55 to +150 C TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage V 60 80 V I = 200A (BR)R R 275 310 I = 50mA F 320 360 I = 100mA F 415 470 I = 250mA F 550 630 I = 500mA F Forward Voltage (Note 6) V mV F 680 800 I = 750mA F 820 960 I = 1A F 1120 1350 I = 1.5A F 565 I = 500mA, T = +100C F A Reverse Current I 20 40 A V = 45V R R Diode Capacitance C 20 pF f = 1MHz, V = 25V D R Switched from I = 500mA to F Reverse Recovery Time t 10 ns I = 500mA RR R Measured I = 50mA R Note: 6. Measured under pulsed conditions. Pulse width = 300S. Duty cycle 2%. 2 of 5 ZHCS506Q May 2016 Diodes Incorporated www.diodes.com Document number: DS38913 Rev. 1 - 2