X-On Electronics has gained recognition as a prominent supplier of VS-113CNQ100ASLPBF Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-113CNQ100ASLPBF Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-113CNQ100ASLPBF Vishay

VS-113CNQ100ASLPBF electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.VS-113CNQ100ASLPBF
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Vishay Semiconductors Schottky Diodes & Rectifiers 2X55A 100V Common Cathode
Datasheet: VS-113CNQ100ASLPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 400
Multiples : 400
400 : USD 6.8725
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 10.3811
10 : USD 9.3486
25 : USD 8.517
100 : USD 7.6784
250 : USD 7.1229
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-113CNQ100ASLPBF from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-113CNQ100ASLPBF and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-113CNQ100APbF Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier New Generation 3 D-61 Package, 2 x 55 A FEATURES VS-113CNQ100APbF Base 175 C T operation common J Available cathode Center tap module Available Low forward voltage drop 12 3 High frequency operation Anode Anode Common 1 2 High power discrete cathode D-61-8 High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance VS-113CNQ100ASMPbF Guard ring for enhanced ruggedness and long term reliability New fully transfer-mold low profile, small footprint, high 12 3 current package Anode Anode Common 1 2 cathode Designed and qualified for industrial level Material categorization: for definitions of compliance D-61-8-SM please see www.vishay.com/doc 99912 Base Note VS-113CNQ100ASLPbF common * This datasheet provides information about parts that are cathode RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details. 13 Anode Anode DESCRIPTION 1 2 D-61-8-SL The center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation PRODUCT SUMMARY up to 175 C junction temperature. Typical applications are Package D-61-8, D-61-8-SM, D-61-8-SL in switching power supplies, converters, freewheeling I 2 x 55 A F(AV) diodes, and reverse battery protection. V 100 V R V at I 0.81 V F F I max. 32 mA at 125 C RM T max. 175 C J Diode variation Common cathode E 15 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 110 A F(AV) V 100 V RRM I t = 5 s sine 7000 A FSM p V 55 A , T = 125 C (per leg) 0.66 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-113CNQ100APbF UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM Revision: 23-May-14 Document Number: 94125 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-113CNQ100APbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 55 forward current I 50 % duty cycle at T = 150 C, rectangular waveform A F(AV) C per device 110 See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 7000 non-repetitive surge current per leg I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 720 See fig. 7 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 30 mH 15 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 55 A 0.81 T = 25 C J 110 A 1.00 Maximum forward voltage drop per leg (1) V V FM See fig. 1 55 A 0.66 T = 125 C J 110 A 0.79 T = 25 C 1.0 J Maximum reverse leakage current per leg (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 32 J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1960 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage , T -55 to +175 C T J Stg temperature range Maximum thermal resistance, DC operation 0.5 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.25 C/W junction to case per package Typical thermal resistance, Mounting surface, smooth and greased R 0.30 thCS case to heatsink (D-61-8 only) Device flatness < 5 mils 7.8 g Approximate weight 0.28 oz. minimum 12 (10) kgf cm Mounting torque Recommended hardware 3M stainless screw (D-61-8 only) (lbf in) maximum 24 (20) Case style D-61-8 113CNQ100A Marking device Case style D-61-8-SM 113CNQ100ASM Case style D-61-8-SL 113CNQ100ASL Revision: 23-May-14 Document Number: 94125 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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