VS-16RIA100 Vishay

VS-16RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 16 A FEATURES Improved glass passivation for high reliability and exceptional stability at high temperature High dI/dt and dV/dt capabilities Standard package Low thermal resistance Metric threads version available TO-48 (TO-208AA) Types up to 1200 V V /V DRM RRM Designed and qualified for industrial and consumer level PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 16 A T(AV) please see www.vishay.com/doc 99912 100 V, 200 V, 400 V, 600 V, 800 V, V /V DRM RRM 1000 V, 1200 V TYPICAL APPLICATIONS V 1.75 V TM Medium power switching I 60 mA GT Phase control applications T -65 C to +125 C J Package TO-48 (TO-208AA) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 16 A I T(AV) T 85 C C I 35 A T(RMS) 50 Hz 340 I A TSM 60 Hz 360 50 Hz 574 2 2 I t A s 60 Hz 524 V /V 100 to 1200 V DRM RRM t Typical 110 s q T -65 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE I /I MAXIMUM DRM RRM RSM DRM RRM TYPE VOLTAGE (1) (2) AND OFF-STATE VOLTAGE PEAK VOLTAGE AT T = T MAXIMUM J J NUMBER CODE V V mA 10 100 150 20 20 200 300 40 400 500 VS-16RIA 60 600 700 10 80 800 900 100 1000 1100 120 1200 1300 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/s (2) For voltage pulses with t 5 ms p Revision: 21-Sep-17 Document Number: 93695 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-16RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 16 A Maximum average on-state current I 180 sinusoidal conduction T(AV) at case temperature 85 C Maximum RMS on-state current I 35A T(RMS) t = 10 ms 340 No voltage reapplied t = 8.3 ms 360 Maximum peak, one-cycle I A TSM non-repetitive surge current t = 10 ms 285 100 % V RRM reapplied t = 8.3 ms 300 Sinusoidal half wave, initial T = T maximum J J t = 10 ms 574 No voltage reapplied t = 8.3 ms 524 2 2 2 Maximum I t for fusing I t A s t = 10 ms 405 100 % V RRM reapplied t = 8.3 ms 375 t = 0.1 to 10 ms, no voltage reapplied, 2 2 2 Maximum I t for fusing I t 5740 A s T = T maximum J J (16.7 % x x I < I < x I ), T(AV) T(AV) Low level value of threshold voltage V 0.97 T(TO)1 T = T maximum J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.24 T(TO)2 T(AV) J J Low level value of (16.7 % x x I < I < x I ), T(AV) T(AV) r 17.9 t1 on-state slope resistance T = T maximum J J m High level value of r (I > x I ), T = T maximum 13.6 t2 T(AV) J J on-state slope resistance Maximum on-state voltage V I = 50 A, T = 25 C 1.75 V TM pk J Maximum holding current I 130 H T = 25 C, anode supply 6 V, resistive load mA J Latching current I 200 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS V 600 V 200 DRM T = T maximum, V = Rated V V 800 V J J DM DRM 180 DRM Maximum rate of rise dI/dt Gate pulse = 20 V, 15 , t = 6 s, t = 0.1 s maximum A/s p r of turned-on current V 1000 V 160 DRM I = (2 x rated dI/dt) A TM V 1600 V 150 DRM T = 25 C, J Typical turn-on time t 0.9 gt at rated V /V , T = 125 C DRM RRM J T = T maximum, J J Typical reverse recovery time t 4 rr I = I , t > 200 s, dI/dt = - 10 A/s s TM T(AV) p T = T maximum, I = I , t > 200 s, V = 100 V, J J TM T(AV) p R Typical turn-off time t dI/dt = - 10 A/s, dV/dt = 20 V/s linear to 67 % V , 110 q DRM gate bias 0 V to 100 W Note t = 10 s up to 600 V, t = 30 s up to 1600 V available on special request q q BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = T maximum linear to 100 % rated V 100 Maximum critical rate of rise J J DRM dV/dt V/s of off-state voltage (1) T = T maximum linear to 67 % rated V 300 J J DRM Note (1) Available with: dV/dt = 1000 V/s, to complete code add S90 i.e. 16RIA120S90 Revision: 21-Sep-17 Document Number: 93695 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000