X-On Electronics has gained recognition as a prominent supplier of VS-16RIA120 SCRs across the USA, India, Europe, Australia, and various other global locations. VS-16RIA120 SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-16RIA120 Vishay

VS-16RIA120 electronic component of Vishay
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See Product Specifications
Part No.VS-16RIA120
Manufacturer: Vishay
Category: SCRs
Description: Vishay Semiconductors SCRs 1200 Volt 16 Amp
Datasheet: VS-16RIA120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.322 ea
Line Total: USD 14.32 
Availability - 110
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
110
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 14.322
10 : USD 13.827
20 : USD 13.816
100 : USD 13.761
2000 : USD 13.75

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-16RIA120 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-16RIA120 and other electronic components in the SCRs category and beyond.

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VS-16RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 16 A FEATURES Improved glass passivation for high reliability and exceptional stability at high temperature High dI/dt and dV/dt capabilities Standard package Low thermal resistance Metric threads version available TO-48 (TO-208AA) Types up to 1200 V V /V DRM RRM Designed and qualified for industrial and consumer level PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 16 A T(AV) please see www.vishay.com/doc 99912 100 V, 200 V, 400 V, 600 V, 800 V, V /V DRM RRM 1000 V, 1200 V TYPICAL APPLICATIONS V 1.75 V TM Medium power switching I 60 mA GT Phase control applications T -65 C to +125 C J Package TO-48 (TO-208AA) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 16 A I T(AV) T 85 C C I 35 A T(RMS) 50 Hz 340 I A TSM 60 Hz 360 50 Hz 574 2 2 I t A s 60 Hz 524 V /V 100 to 1200 V DRM RRM t Typical 110 s q T -65 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE I /I MAXIMUM DRM RRM RSM DRM RRM TYPE VOLTAGE (1) (2) AND OFF-STATE VOLTAGE PEAK VOLTAGE AT T = T MAXIMUM J J NUMBER CODE V V mA 10 100 150 20 20 200 300 40 400 500 VS-16RIA 60 600 700 10 80 800 900 100 1000 1100 120 1200 1300 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/s (2) For voltage pulses with t 5 ms p Revision: 21-Sep-17 Document Number: 93695 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-16RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 16 A Maximum average on-state current I 180 sinusoidal conduction T(AV) at case temperature 85 C Maximum RMS on-state current I 35A T(RMS) t = 10 ms 340 No voltage reapplied t = 8.3 ms 360 Maximum peak, one-cycle I A TSM non-repetitive surge current t = 10 ms 285 100 % V RRM reapplied t = 8.3 ms 300 Sinusoidal half wave, initial T = T maximum J J t = 10 ms 574 No voltage reapplied t = 8.3 ms 524 2 2 2 Maximum I t for fusing I t A s t = 10 ms 405 100 % V RRM reapplied t = 8.3 ms 375 t = 0.1 to 10 ms, no voltage reapplied, 2 2 2 Maximum I t for fusing I t 5740 A s T = T maximum J J (16.7 % x x I < I < x I ), T(AV) T(AV) Low level value of threshold voltage V 0.97 T(TO)1 T = T maximum J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.24 T(TO)2 T(AV) J J Low level value of (16.7 % x x I < I < x I ), T(AV) T(AV) r 17.9 t1 on-state slope resistance T = T maximum J J m High level value of r (I > x I ), T = T maximum 13.6 t2 T(AV) J J on-state slope resistance Maximum on-state voltage V I = 50 A, T = 25 C 1.75 V TM pk J Maximum holding current I 130 H T = 25 C, anode supply 6 V, resistive load mA J Latching current I 200 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS V 600 V 200 DRM T = T maximum, V = Rated V V 800 V J J DM DRM 180 DRM Maximum rate of rise dI/dt Gate pulse = 20 V, 15 , t = 6 s, t = 0.1 s maximum A/s p r of turned-on current V 1000 V 160 DRM I = (2 x rated dI/dt) A TM V 1600 V 150 DRM T = 25 C, J Typical turn-on time t 0.9 gt at rated V /V , T = 125 C DRM RRM J T = T maximum, J J Typical reverse recovery time t 4 rr I = I , t > 200 s, dI/dt = - 10 A/s s TM T(AV) p T = T maximum, I = I , t > 200 s, V = 100 V, J J TM T(AV) p R Typical turn-off time t dI/dt = - 10 A/s, dV/dt = 20 V/s linear to 67 % V , 110 q DRM gate bias 0 V to 100 W Note t = 10 s up to 600 V, t = 30 s up to 1600 V available on special request q q BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = T maximum linear to 100 % rated V 100 Maximum critical rate of rise J J DRM dV/dt V/s of off-state voltage (1) T = T maximum linear to 67 % rated V 300 J J DRM Note (1) Available with: dV/dt = 1000 V/s, to complete code add S90 i.e. 16RIA120S90 Revision: 21-Sep-17 Document Number: 93695 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
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GENERAL SEMICONDUCTOR (VISHAY)
GS
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SIX
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Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
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Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
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Vishay Huntington Electric Inc.
Vishay Intertech
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Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
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Vishay Semiconductor Diodes Division
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VishaySemiconductors
VishaySprague
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VIT
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VSC
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VSS
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