X-On Electronics has gained recognition as a prominent supplier of VS-16TTS08-M3 SCRs across the USA, India, Europe, Australia, and various other global locations. VS-16TTS08-M3 SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-16TTS08-M3 Vishay

VS-16TTS08-M3 electronic component of Vishay
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Part No.VS-16TTS08-M3
Manufacturer: Vishay
Category: SCRs
Description: SCRs 10A 800V Single SCR
Datasheet: VS-16TTS08-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 2.0349 ea
Line Total: USD 16279.2 
Availability - 0
MOQ: 8000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 8000
Multiples : 1
8000 : USD 2.0349

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.3826
10 : USD 3.5211
25 : USD 3.3243
100 : USD 2.8894
500 : USD 2.4544
1000 : USD 2.1541

   
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We are delighted to provide the VS-16TTS08-M3 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-16TTS08-M3 and other electronic components in the SCRs category and beyond.

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VS-16TTS..PbF Series, VS-16TTS..-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 16 A FEATURES 2 Designed and qualified according to (A) JEDEC -JESD 47 125 C max. operating junction temperature Material categorization: 3 for definitions of compliance please see 2 1 1 (K) (G) 3 www.vishay.com/doc 99912 TO-220AB Available APPLICATIONS PRIMARY CHARACTERISTICS Typical usage is in input rectification crowbar (soft start) I 10 A T(AV) and AC switch in motor control, UPS, welding, and battery V /V 800 V, 1200 V DRM RRM charge V 1.4 V TM DESCRIPTION I 60 mA GT T -40 C to 125 C The VS-16TTS... high voltage series of silicon controlled J rectifiers are specifically designed for medium power Package TO-220AB switching and phase control applications. The glass Circuit configuration Single SCR passivation technology used has reliable operating up to 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C, A J 13.5 17 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 10 T(AV) A I 16 RMS (1) V /V Range 800/1200 V DRM RRM I 200 A TSM V 10 A, T = 25 C 1.4 V T J dV/dt 500 V/s dI/dt 150 A/s T Range -40 to 125 C J Note (1) For higher voltage up to 1600 V contact factory VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM PEAK I /I RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-16TTS08PbF, VS-16TTS08-M3 800 800 10 VS-16TTS12PbF, VS-16TTS12-M3 1200 1200 Revision: 28-Sep-17 Document Number: 94603 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-16TTS..PbF Series, VS-16TTS..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 98 C, 180 conduction, half sine wave 10 T(AV) C Maximum RMS on-state current I 16 RMS A 10 ms sine pulse, rated V applied 170 Maximum peak, one-cycle, RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 200 10 ms sine pulse, rated V applied 144 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 200 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 2000 A s Maximum on-state voltage drop V 10 A, T = 25 C 1.4 V TM J On-state slope resistance r 24.0 m t T = 125 C J Threshold voltage V 1.1 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = Rated V /V RM DM R RRM DRM T = 125 C 10 J mA Anode supply = 6 V, resistive load, initial I = 1 A T Holding current I - 150 H 16TTS08PbF, 16TTS12PbF, T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 C, V = R - k = Open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 65 C 90 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 60 mA GT J Anode supply = 6 V, resistive load, T = 125 C 35 J Anode supply = 6 V, resistive load, T = - 65 C 3.0 J Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J voltage to trigger V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = 25 C 0.9 Typical turn-on time t gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 28-Sep-17 Document Number: 94603 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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