VS-16TTS08S-M3, VS-16TTS12S-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Surface Mount Phase Control SCR, 16 A FEATURES 2, 4 Meets MSL level 1, per J-STD-020, Anode LF maximum peak of 245 C Designed and qualified according JEDEC -JESD 47 2 Material categorization: for definitions of 1 compliance please see www.vishay.com/doc 99912 1 3 3 Cathode Gate APPLICATIONS 2 D PAK (TO-263AB) Input rectification (soft start) Vishay input diodes, switches and output rectifiers which PRIMARY CHARACTERISTICS are available in identical package outlines I 10 A T(AV) V /V 800 V, 1200 V DRM RRM DESCRIPTION V 1.4 V TM The VS-16TTS..S-M3 high voltage series of silicon I 60 mA GT controlled rectifiers are specifically designed for medium T -40 C to 125 C J power switching and phase control applications. The glass 2 Package D PAK (TO-263AB) passivation technology used has reliable operation up to 125 C junction temperature. Circuit configuration Single SCR OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G-10 glass fabric-based epoxy 2.5 3.5 with 4 oz. (140 m) copper A Aluminum IMS, R = 15 C/W 6.3 9.5 thCA Aluminum IMS with heatsink, R = 5 C/W 14.0 18.5 thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 10 T(AV) A I 16 RMS V /V 800 to 1200 V RRM DRM I 200 A TSM V 10 A, T = 25 C 1.4 V T J dV/dt 500 V/s dI/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM PEAK I /I RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-16TTS08S-M3 800 800 10 VS-16TTS12S-M3 1200 1200 Revision: 04-Jan-18 Document Number: 96412 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-16TTS08S-M3, VS-16TTS12S-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 98 C, 180 conduction, half sine wave 10 T(AV) C Maximum RMS on-state current I 16 RMS A 10 ms sine pulse, rated V applied 170 Maximum peak, one-cycle, RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 200 10 ms sine pulse, rated V applied 144 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 200 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 2000 A s Maximum on-state voltage drop V 10 A, T = 25 C 1.4 V TM J On-state slope resistance r 24.0 m t T = 125 C J Threshold voltage V 1.1 V T(TO) T = 25 C V = rated V /V 0.5 J R RRM DRM Maximum reverse and direct leakage current I /I RM DM T = 125 C 10 J mA Anode supply = 6 V, resistive load, initial I = 1 A, T Holding current I - 150 H T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load,T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max. linear to 80 % V = R - k = open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 10 C 90 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 60 mA GT J Anode supply = 6 V, resistive load, T = 125 C 35 J Anode supply = 6 V, resistive load, T = - 10 C 3.0 J Maximum required DC gate voltage to trigger V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 04-Jan-18 Document Number: 96412 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000