X-On Electronics has gained recognition as a prominent supplier of VS-175BGQ030 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-175BGQ030 Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-175BGQ030 Vishay

VS-175BGQ030 electronic component of Vishay
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See Product Specifications
Part No.VS-175BGQ030
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Vishay Semiconductors Schottky Diodes & Rectifiers 175 Amp 30 Volt 7400 Amp IFSM
Datasheet: VS-175BGQ030 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 375
Multiples : 1
375 : USD 5.1
500 : USD 5.0488
1000 : USD 4.9987
2000 : USD 4.9488
2500 : USD 4.8988
3000 : USD 4.85
4000 : USD 4.8012
5000 : USD 4.7537
10000 : USD 4.7062
50000 : USD 4.6587
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.554
10 : USD 5.5062
100 : USD 4.4584
250 : USD 4.2133
375 : USD 3.9458
1125 : USD 3.3773
2625 : USD 3.1878
5250 : USD 3.0541
10125 : USD 2.976
N/A

Obsolete
0
MOQ : 25
Multiples : 25
25 : USD 3.8678
3825 : USD 3.5097
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the VS-175BGQ030 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-175BGQ030 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-175BGQ030 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 175 A FEATURES 150 C max. operating junction temperature High frequency operation Cathode Anode Ultralow forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term reliability Screw mounting only PowerTab Designed and qualified according to JEDEC -JESD 47 PowerTab package PRODUCT SUMMARY Material categorization: for definitions of compliance Package PowerTab please see www.vishay.com/doc 99912 I 175 A F(AV) DESCRIPTION V 30 V R The VS-175BGQ030 Schottky rectifier has been optimized V at I 0.52 V F F for ultralow forward voltage drop specifically for low voltage I 650 mA at 125 C output in high current AC/DC power supplies. RM The proprietary barrier technology allows for reliable T max. 125 C J operation up to 150 C junction temperature. Typical Diode variation Single die applications are in switching power supplies, converters, E 80 mJ AS reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS Rectangular waveform 175 A I F(AV) T 112 C C V 30 V RRM I t = 5 s sine 7400 A FSM p 175 A (typical) 0.47 V pk V F T 150 C J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-175BGQ030 UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 112 C, rectangular waveform 175 A F(AV) C Following any rated load 5 s sine or 3 s rect. pulse 7400 Maximum peak one cycle I condition and with rated A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 1400 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 12 A, L = 1.12 mH 80 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 12 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 16-Jun-15 Document Number: 94583 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-175BGQ030 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 100 A 0.47 0.49 T = 25 C J 175 A 0.55 0.59 (1) Forward voltage drop V V FM 100 A 0.36 0.39 T = 150 C J 175 A 0.47 0.52 T = 125 C, V = 15 V 160 220 J R T = 150 C, V = 30 V 1400 2000 J R (1) Reverse leakage current I mA RM T = 25 C 1.3 4.5 J V = Rated V R R T = 125 C 450 650 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 8500 pF T R DC Typical series inductance L Measured from tab to mounting plane 3.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.25 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.20 thCS case to heatsink 5g Approximate weight 0.18 oz. minimum 1.2 (10) N m Mounting torque (lbf in) maximum 2.4 (20) Marking device Case style PowerTab 175BGQ045 1000 10 000 1000 150 C 125 C 100 100 T = 150 C 100 C J 75 C 10 50 C 10 1 25 C T = 125 C J 0.1 T = 25 C J 1 0.01 0.0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 16-Jun-15 Document Number: 94583 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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