VS-180RKI...PbF, VS-181RKI...PbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 180 A FEATURES Hermetic glass-metal seal International standard case TO-93 (TO-209AB) Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TO-93 (TO-209AB) TYPICAL APPLICATIONS DC motor controls PRIMARY CHARACTERISTICS Controlled DC power supplies I 180 A T(AV) AC controllers V /V 400 V, 800 V, 1000 V DRM RRM V 1.35 V TM I 65 mA GT T -40 C to +125 C J Package TO-93 (TO-209AB) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 180 A I T(AV) T 80 C C I 285 T(RMS) 50 Hz 3800 A I TSM 60 Hz 4000 50 Hz 72 2 2 t kA s I 60 Hz 66 V /V 400 to 1000 V DRM RRM t Typical 100 s q T -40 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I /I MAXIMUM DRM RRM RSM DRM RRM VOLTAGE PART NUMBER PEAK AND OFF-STATE VOLTAGE PEAK VOLTAGE AT T = T MAXIMUM J J CODE V V mA 40 400 500 VS-180RKI 80 800 900 30 VS-181RKI 100 1000 1100 Revision: 26-Sep-17 Document Number: 94382 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-180RKI...PbF, VS-181RKI...PbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 180 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 80 C Maximum RMS on-state current I DC at 79 C case temperature 285 RMS t = 10 ms 3800 No voltage reapplied t = 8.3 ms 4000 A Maximum peak, one-cycle I TSM non-repetitive surge current t = 10 ms 3500 100 % V RRM reapplied t = 8.3 ms 3660 Sinusoidal half wave, intial T = T maximum t = 10 ms J J 72 No voltage reapplied t = 8.3 ms 66 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 61 100 % V RRM reapplied t = 8.3 ms 56 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 720 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.83 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.89 T(TO)2 T(AV) J J Low level value of on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.92 t1 T(AV) T(AV) J J m High level value of on-state slope resistance r (I > x I ), T = T maximum 0.81 t2 T(AV) J J Maximum on-state voltage V I = 570 A, T = T maximum, t = 10 ms sine pulse 1.35 V TM pk J J p Maximum holding current I 600 H T = 25 C, anode supply 12 V resistive load mA J Typical latching current I 1000 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of Gate drive 20 V, 20 , t 1 s r dI/dt 300 A/s rise of turned-on current T = T maximum, anode voltage 80 % V J J DRM Gate current 1 A, dI /dt = 1 A/s g Typical delay time t 1.0 d V = 0.67 % V , T = 25 C d DRM J s I = 50 A, T = T maximum, dI/dt = 10 A/s, TM J J Typical turn-off time t 100 q V = 100 V, dV/dt = 20 V/s R BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of dV/dt T = T maximum linear to 80 % rated V 500 V/s J J DRM rise of off-state voltage Maximum peak reverse and I RRM, T = T maximum rated V /V applied 30 mA J J DRM RRM off-state leakage current I DRM Revision: 26-Sep-17 Document Number: 94382 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000