180/181RKI Series Vishay High Power Products Phase Control Thyristors (Stud Version), 180 A FEATURES Hermetic glass-metal seal RoHS International standard case TO-209AB (TO-93) COMPLIANT RoHS compliant Designed and qualified for industrial level TO-209AB (TO-93) TYPICAL APPLICATIONS DC motor controls Controlled DC power supplies PRODUCT SUMMARY I 180 A T(AV) AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 180 A I T(AV) T 80 C C I 285 A T(RMS) 50 Hz 3800 I A TSM 60 Hz 4000 50 Hz 72 2 2 I t kA s 60 Hz 66 V /V 400 to 1000 V DRM RRM t Typical 100 s q T - 40 to 125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM DRM RRM RSM I /I MAXIMUM DRM RRM TYPE VOLTAGE REPETITIVE PEAK AND NON-REPETITIVE AT T = T MAXIMUM J J NUMBER CODE OFF-STATE VOLTAGE PEAK VOLTAGE mA V V 40 400 500 180/181RKI 30 80 800 900 100 1000 1100 Document Number: 93699 For technical questions, contact: ind-modules vishay.com www.vishay.com Revision: 05-Jun-08 1 180/181RKI Series Phase Control Thyristors Vishay High Power Products (Stud Version), 180 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 180 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 80 C Maximum RMS on-state current I DC at 79 C case temperature 285 A T(RMS) t = 10 ms 3800 No voltage reapplied t = 8.3 ms 4000 Maximum peak, one-cycle I A TSM non-repetitive surge current t = 10 ms 3500 100 % V RRM reapplied t = 8.3 ms 3660 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 72 No voltage reapplied t = 8.3 ms 66 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 61 100 % V RRM reapplied t = 8.3 ms 56 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 720 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.83 T(TO)1 T(AV) T(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.89 T(TO)2 T(AV) J J Low level value of on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.92 t1 T(AV) T(AV) J J m High level value of on-state slope resistance r (I > x I ), T = T maximum 0.81 t2 T(AV) J J Maximum on-state voltage V I = 570 A, T = T maximum, t = 10 ms sine pulse 1.35 V TM pk J J p Maximum holding current I 600 H T = 25 C, anode supply 12 V resistive load mA J Typical latching current I 1000 L SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum non-repetitive rate of rise Gate drive 20 V, 20 , t 1 s r dI/dt 300 A/s of turned-on current T = T maximum, anode voltage 80 % V J J DRM Gate current 1 A, dI /dt = 1 A/s g Typical delay time t 1.0 d V = 0.67 % V , T = 25 C d DRM J s I = 50 A, T = T maximum, dI/dt = 10 A/s, TM J J Typical turn-off time t 100 q V = 100 V, dV/dt = 20 V/s R BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum critical rate of rise dV/dt T = T maximum linear to 80 % rated V 500 V/s J J DRM of off-state voltage Maximum peak reverse and I , RRM T = T maximum, rated V /V applied 30 mA J J DRM RRM off-state leakage current I DRM www.vishay.com For technical questions, contact: ind-modules vishay.com Document Number: 93699 2 Revision: 05-Jun-08