180/181RKI Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 180 A
FEATURES
Hermetic glass-metal seal
RoHS
International standard case TO-209AB (TO-93)
COMPLIANT
RoHS compliant
Designed and qualified for industrial level
TO-209AB (TO-93)
TYPICAL APPLICATIONS
DC motor controls
Controlled DC power supplies
PRODUCT SUMMARY
I 180 A
T(AV) AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
180 A
I
T(AV)
T 80 C
C
I 285 A
T(RMS)
50 Hz 3800
I A
TSM
60 Hz 4000
50 Hz 72
2 2
I t kA s
60 Hz 66
V /V 400 to 1000 V
DRM RRM
t Typical 100 s
q
T - 40 to 125 C
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V /V , MAXIMUM V , MAXIMUM
DRM RRM RSM
I /I MAXIMUM
DRM RRM
TYPE VOLTAGE
REPETITIVE PEAK AND NON-REPETITIVE
AT T = T MAXIMUM
J J
NUMBER CODE
OFF-STATE VOLTAGE PEAK VOLTAGE
mA
V V
40 400 500
180/181RKI 30
80 800 900
100 1000 1100
Document Number: 93699 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 05-Jun-08 1
180/181RKI Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 180 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
180 A
Maximum average on-state current
I 180 conduction, half sine wave
T(AV)
at case temperature
80 C
Maximum RMS on-state current I DC at 79 C case temperature 285 A
T(RMS)
t = 10 ms 3800
No voltage
reapplied
t = 8.3 ms 4000
Maximum peak, one-cycle
I A
TSM
non-repetitive surge current
t = 10 ms 3500
100 % V
RRM
reapplied
t = 8.3 ms 3660
Sinusoidal half wave,
initial T = T maximum
t = 10 ms J J 72
No voltage
reapplied
t = 8.3 ms 66
2 2 2
Maximum I t for fusing I t kA s
t = 10 ms 61
100 % V
RRM
reapplied
t = 8.3 ms 56
2 2 2
Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 720 kA s
Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.83
T(TO)1 T(AV) T(AV) J J
V
High level value of threshold voltage V (I > x I ), T = T maximum 0.89
T(TO)2 T(AV) J J
Low level value of on-state slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.92
t1 T(AV) T(AV) J J
m
High level value of on-state slope resistance r (I > x I ), T = T maximum 0.81
t2 T(AV) J J
Maximum on-state voltage V I = 570 A, T = T maximum, t = 10 ms sine pulse 1.35 V
TM pk J J p
Maximum holding current I 600
H
T = 25 C, anode supply 12 V resistive load mA
J
Typical latching current I 1000
L
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum non-repetitive rate of rise Gate drive 20 V, 20 , t 1 s
r
dI/dt 300 A/s
of turned-on current T = T maximum, anode voltage 80 % V
J J DRM
Gate current 1 A, dI /dt = 1 A/s
g
Typical delay time t 1.0
d
V = 0.67 % V , T = 25 C
d DRM J
s
I = 50 A, T = T maximum, dI/dt = 10 A/s,
TM J J
Typical turn-off time t 100
q
V = 100 V, dV/dt = 20 V/s
R
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum critical rate of rise
dV/dt T = T maximum linear to 80 % rated V 500 V/s
J J DRM
of off-state voltage
Maximum peak reverse and I ,
RRM
T = T maximum, rated V /V applied 30 mA
J J DRM RRM
off-state leakage current I
DRM
www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93699
2 Revision: 05-Jun-08