X-On Electronics has gained recognition as a prominent supplier of VS-16TTS08SPBF SCRs across the USA, India, Europe, Australia, and various other global locations. VS-16TTS08SPBF SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-16TTS08SPBF Vishay

VS-16TTS08SPBF electronic component of Vishay
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See Product Specifications
Part No.VS-16TTS08SPBF
Manufacturer: Vishay
Category: SCRs
Description: Vishay Semiconductors SCRs 200 Amp ITSM
Datasheet: VS-16TTS08SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1000
Multiples : 1000
1000 : USD 1.6838
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.6958
10 : USD 2.2315
100 : USD 1.8434
250 : USD 1.781
500 : USD 1.6008
1000 : USD 1.4609
2500 : USD 1.4609
5000 : USD 1.4497
10000 : USD 1.4047
N/A

Obsolete
0
MOQ : 100
Multiples : 50
100 : USD 0.8279
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-16TTS08SPBF from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-16TTS08SPBF and other electronic components in the SCRs category and beyond.

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VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 16 A FEATURES 2 Designed and qualified for industrial level (A) Fully isolated package (V = 2500 V ) INS RMS UL E78996 approved 125 C max. operating junction temperature Material categorization: 3 2 For definitions of compliance please see 1 1 (K) (G) 3 Available TO-220AB FULL-PAK www.vishay.com/doc 99912 APPLICATIONS Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery PRODUCT SUMMARY charge Package TO-220AB FP Diode variation Single SCR DESCRIPTION I 10 A T(AV) The VS-16TTS..FP... high voltage series of silicon controlled V /V 800 V, 1200 V DRM RRM rectifiers are specifically designed for medium power V 1.4 V TM switching and phase control applications. The glass I 60 mA GT passivation technology used has reliable operation up to T - 40 C to 125 C 125 C junction temperature. J OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C, A J 13.5 17 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 10 T(AV) A I 16 RMS V /V 800/1200 V DRM RRM I 200 A TSM V 10 A, T = 25 C 1.4 V T J dV/dt 500 V/s dI/dt 150 A/s T Range - 40 to 125 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM PEAK I /I RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-16TTS08FPPbF, VS-16TTS08FP-M3 800 800 10 VS-16TTS12FPPbF, VS-16TTS12FP-M3 1200 1200 Revision: 26-Jul-13 Document Number: 94381 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 70 C, 180 conduction, half sine wave 10 T(AV) C Maximum RMS on-state current I 16 RMS A 10 ms sine pulse, rated V applied 170 Maximum peak, one-cycle, RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 200 10 ms sine pulse, rated V applied 144 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 200 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 2000 A s Maximum on-state voltage drop V 10 A, T = 25 C 1.4 V TM J On-state slope resistance r 24.0 m t T = 125 C J Threshold voltage V 1.1 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = Rated V /V RM DM R RRM DRM T = 125 C 10 J mA Anode supply = 6 V, resistive load, initial I = 1 A T Holding current I - 150 H 16TTS08FP, 16TTS12FP, T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = Open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 10 C 90 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 60 mA GT J Anode supply = 6 V, resistive load, T = 125 C 35 J Anode supply = 6 V, resistive load, T = - 10 C 3.0 J Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J voltage to trigger V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = 25 C 0.9 Typical turn-on time t gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 26-Jul-13 Document Number: 94381 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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