VS-16TTS..PbF Series, VS-16TTS..-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 16 A FEATURES 2 Designed and qualified according to (A) JEDEC -JESD 47 125 C max. operating junction temperature Material categorization: 3 for definitions of compliance please see 2 1 1 (K) (G) 3 www.vishay.com/doc 99912 TO-220AB Available APPLICATIONS PRIMARY CHARACTERISTICS Typical usage is in input rectification crowbar (soft start) I 10 A T(AV) and AC switch in motor control, UPS, welding, and battery V /V 800 V, 1200 V DRM RRM charge V 1.4 V TM DESCRIPTION I 60 mA GT T -40 C to 125 C The VS-16TTS... high voltage series of silicon controlled J rectifiers are specifically designed for medium power Package TO-220AB switching and phase control applications. The glass Circuit configuration Single SCR passivation technology used has reliable operating up to 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C, A J 13.5 17 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 10 T(AV) A I 16 RMS (1) V /V Range 800/1200 V DRM RRM I 200 A TSM V 10 A, T = 25 C 1.4 V T J dV/dt 500 V/s dI/dt 150 A/s T Range -40 to 125 C J Note (1) For higher voltage up to 1600 V contact factory VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM PEAK I /I RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-16TTS08PbF, VS-16TTS08-M3 800 800 10 VS-16TTS12PbF, VS-16TTS12-M3 1200 1200 Revision: 28-Sep-17 Document Number: 94603 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-16TTS..PbF Series, VS-16TTS..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 98 C, 180 conduction, half sine wave 10 T(AV) C Maximum RMS on-state current I 16 RMS A 10 ms sine pulse, rated V applied 170 Maximum peak, one-cycle, RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 200 10 ms sine pulse, rated V applied 144 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 200 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 2000 A s Maximum on-state voltage drop V 10 A, T = 25 C 1.4 V TM J On-state slope resistance r 24.0 m t T = 125 C J Threshold voltage V 1.1 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = Rated V /V RM DM R RRM DRM T = 125 C 10 J mA Anode supply = 6 V, resistive load, initial I = 1 A T Holding current I - 150 H 16TTS08PbF, 16TTS12PbF, T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 C, V = R - k = Open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 65 C 90 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 60 mA GT J Anode supply = 6 V, resistive load, T = 125 C 35 J Anode supply = 6 V, resistive load, T = - 65 C 3.0 J Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J voltage to trigger V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = 25 C 0.9 Typical turn-on time t gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 28-Sep-17 Document Number: 94603 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000
