VS-40TPS16LHM3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES 2 AEC-Q101 qualified meets JESD 201 class 1A (A) whisker test Flexible solution for reliable AC power rectification 1 Easy control peak current at charger power up 2 to reduce passive / electromechanical components 3 1 (K) (G) 3 TO-247AD 3L Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS On-board and off-board EV / HEV battery chargers PRIMARY CHARACTERISTICS Renewable energy inverters I 35 A T(AV) V /V 1600 V DRM RRM DESCRIPTION V 1.45 V TM The VS-40TPS16LHM3 high voltage series of silicon I 150 mA GT controlled rectifiers are specifically designed for medium T -40 C to +125 C J power switching and phase control applications. Package TO-247AD 3L Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 35 T(AV) A I 55 RMS V /V 1600 V RRM DRM I 500 A TSM V 40 A, T = 25 C 1.45 V T J dv/dt 1000 V/s di/dt 100 A/s T -40 to +125 C J VOLTAGE RATINGS V / V , MAXIMUM V , MAXIMUM RRM DRM RSM I / I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-40TPS16LHM3 1600 1700 10 Revision: 23-Feb-18 Document Number: 96134 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-40TPS16LHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 79 C, 180 conduction half sine wave 35 T(AV) C Maximum continuous RMS I 55 T(RMS) on-state current as AC switch A 10 ms sine pulse, rated V applied 420 Maximum peak, one-cycle RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 500 Initial 10 ms sine pulse, rated V applied 880 RRM 2 2 T = T max. 2 Maximum I t for fusing I t J J A s 10 ms sine pulse, no voltage reapplied 1250 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 12 500 A s Low level value of threshold voltage V 1.02 T(TO)1 V High level value of threshold voltage V 1.23 T(TO)2 T = 125 C J Low level value of on-state slope resistance r 9.74 t1 m High level value of on-state slope resistance r 7.50 t2 110 A, T = 25 C 1.92 J Maximum peak on-state voltage V V TM 90 A, T = 25 C 1.82 J Maximum rate of rise of turned-on current dI/dt T = 25 C 100 A/s J Maximum holding current I Anode supply = 6 V, resistive load, initial T = 1 A, I = 25 C 300 H J T Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 350 L J mA T = 25 C 0.5 J Maximum reverse and direct leakage current I I V = rated V /V RRM/ DRM R RRM DRM T = 125 C 10 J Maximum rate of rise of off-state voltage dV/dt T = T maximum, linear to 80 % V , R - k = open 1000 V/s J J DRM g TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 10 GM W Maximum average gate power P 2.5 G(AV) Maximum peak gate current I 2.5 A GM Maximum peak negative gate voltage - V 10 V GM T = -40 C 4.0 J Anode supply = 6 V Maximum required DC gate voltage to trigger V T = 25 C 2.5 V GT J resistive load T = 125 C 1.7 J T = -40 C 270 J Anode supply = 6 V Maximum required DC gate current to trigger I T = 25 C 150 mA GT J resistive load T = 125 C 80 J Maximum DC gate voltage not to trigger V 0.25 V GD T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 6mA GD Revision: 23-Feb-18 Document Number: 96134 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000