VS-40TPS12ALHM3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES 2 Low I GT (A) AEC-Q101 qualified meets JESD 201 class 1A whisker test Flexible solution for reliable AC power 1 rectification 2 3 Easy control peak current at charger power up to reduce 1 (K) (G) 3 TO-247AD 3L passive / electromechanical components Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS On-board and off-board EV / HEV battery chargers I 35 A T(AV) Renewable energy inverters V /V 1200 V DRM RRM V 1.45 V TM DESCRIPTION I 150 mA GT The VS-40TPS12.. high voltage series of silicon controlled T -40 C to +125 C J rectifiers are specifically designed for medium power Package TO-247AD 3L switching and phase control applications. Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 35 T(AV) A I 55 RMS V /V 1200 V RRM DRM I 600 A TSM V 40 A, T = 25 C 1.45 V T J dv/dt 500 V/s di/dt 100 A/s T - 40 to + 125 C J VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I /I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-40TPS12ALHM3 1200 1300 10 Revision: 13-May-2019 Document Number: 96604 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-40TPS12ALHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 79 C, 180 conduction half sine wave 35 T(AV) C Maximum continuous RMS I 55 T(RMS) on-state current as AC switch A 10 ms sine pulse, rated V applied 500 Maximum peak, one-cycle RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 600 Initial 10 ms sine pulse, rated V applied 1250 RRM 2 2 2 T = T max. J J Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 1760 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 17 600 A s Low level value of threshold voltage V 1.02 T(TO)1 V High level value of threshold voltage V 1.23 T(TO)2 T = 125 C J Low level value of on-state slope resistance r 9.74 t1 m High level value of on-state slope resistance r 7.50 t2 Maximum peak on-state voltage V 110 A, T = 25 C 1.85 V TM J Maximum rate of rise of turned-on current di/dt T = 25 C 100 A/s J Maximum holding current I Anode supply = 6 V, resistive load, initial T = 1 A, I = 25 C 300 H J T Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 350 L J mA T = 25 C 0.5 J Maximum reverse and direct leakage current I I V = rated V /V RRM/ DRM R RRM DRM T = 125 C 10 J Maximum rate of rise of off-state voltage dv/dt T = T maximum, linear to 80 % V , R - k = 100 500 V/s J J DRM g TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 10 GM W Maximum average gate power P 2.5 G(AV) Maximum peak gate current I 2.5 A GM Maximum peak negative gate voltage -V 10 V GM T = - 40 C 2.0 J Anode supply = 6 V Maximum required DC gate voltage to trigger V T = 25 C 1.7 V GT J resistive load T = 125 C 1.3 J T = - 40 C 150 J Anode supply = 6 V Maximum required DC gate current to trigger I T = 25 C 40 mA GT J resistive load T = 125 C 20 J Maximum DC gate voltage not to trigger V 0.15 V GD T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 1mA GD Revision: 13-May-2019 Document Number: 96604 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000