VS-40TPS16PbF, VS-40TPS16-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES 2 High voltage (up to 1600 V) (A) Designed and qualified according to JEDEC -JESD47 125 C max. operating junction temperature 3 Material categorization: 2 1 For definitions of compliance please see Available 1 (K) (G) 3 www.vishay.com/doc 99912 TO-247AC APPLICATIONS Typical usage is in input rectification crowbar (soft start) PRODUCT SUMMARY and AC switch in motor control, UPS, welding and battery Package TO-247AC charge Diode variation Single SCR I 35 A T(AV) DESCRIPTION V /V 1600 V DRM RRM The VS-40TPS16... high voltage series of silicon controlled V 1.45 V rectifiers are specifically designed for medium power TM switching and phase control applications. The glass I 150 mA GT passivation technology used has reliable operation up to T -40 C to 125 C J 125 C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 35 T(AV) A I 55 RMS V /V 1600 V RRM DRM I 500 A TSM V 40 A, T = 25 C 1.45 V T J dV/dt 1000 V/s dI/dt 100 A/s T -40 to 125 C J VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I /I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-40TPS16PbF, VS-40TPS16-M3 1600 1700 10 Revision: 06-Feb-14 Document Number: 94389 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-40TPS16PbF, VS-40TPS16-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 79 C, 180 conduction half sine wave 35 T(AV) C Maximum continuous RMS I 55 T(RMS) on-state current as AC switch A 10 ms sine pulse, rated V applied 420 Maximum peak, one-cycle RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 500 = Initial T J 10 ms sine pulse, rated V applied 880 RRM T maximum 2 2 2 J Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 1250 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 12 500 A s Low level value of threshold voltage V 1.02 T(TO)1 V High level value of threshold voltage V 1.23 T(TO)2 T = 125 C J Low level value of on-state slope resistance r 9.74 t1 m High level value of on-state slope resistance r 7.50 t2 Maximum peak on-state voltage V 110 A, T = 25 C 1.85 V TM J Maximum rate of rise of turned-on current dI/dt T = 25 C 100 A/s J Maximum holding current I Anode supply = 6 V, resistive load, initial I = 1 A, T = 25 C 200 H T J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 300 L J mA T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = Rated V /V RRM DRM R RRM DRM T = 125 C 10 J Maximum rate of rise of off-state voltage dV/dt T = T maximum, linear to 80 % V , R - k = Open 1000 V/s J J DRM g TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak gate power P 10 GM W Maximum average gate power P 2.5 G(AV) Maximum peak gate current I 2.5 A GM Maximum peak negative gate voltage - V 10 GM T = - 40 C 4.0 J V Maximum required DC gate V T = 25 C Anode supply = 6 V resistive load 2.5 GT J voltage to trigger T = 125 C 1.7 J T = - 40 C 270 J T = 25 C Anode supply = 6 V resistive load 150 J Maximum required DC gate current to trigger I mA GT T = 125 C 80 J T = 25 C, for 40TPS08A 40 J Maximum DC gate voltage not to trigger V 0.25 V GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 6mA GD Revision: 06-Feb-14 Document Number: 94389 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000