X-On Electronics has gained recognition as a prominent supplier of VS-25TTS08SPBF SCRs across the USA, India, Europe, Australia, and various other global locations. VS-25TTS08SPBF SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-25TTS08SPBF Vishay

VS-25TTS08SPBF electronic component of Vishay
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Part No.VS-25TTS08SPBF
Manufacturer: Vishay
Category: SCRs
Description: SCRs RECOMMENDED ALT 78-VS-25TTS08S-M3
Datasheet: VS-25TTS08SPBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 3.3819
10 : USD 2.8099
100 : USD 2.3166
250 : USD 2.2379
500 : USD 2.0091
1000 : USD 1.8436
2000 : USD 1.8436
5000 : USD 1.8203
10000 : USD 1.7624
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Height
Length
Type
Width
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-25TTS08SPBF from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-25TTS08SPBF and other electronic components in the SCRs category and beyond.

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VS-25TTS16SPbF www.vishay.com Vishay Semiconductors Thyristor Surface Mount, Phase Control SCR, 16 A FEATURES 4 Anode Meets MSL level 1, per J-STD-020, 2, 4 LF maximum peak of 260 C Designed and qualified according JEDEC -JESD 47 2 Material categorization: 3 1 3 for definitions of compliance please see 1 Cathode Gate www.vishay.com/doc 99912 2 D PAK (TO-263AB) APPLICATIONS Input rectification (soft start) PRIMARY CHARACTERISTICS Vishay input diodes, switches and output rectifiers which I 16 A T(AV) are available in identical package outlines V /V 1600 V DRM RRM V 1.25 V TM DESCRIPTION I 45 mA GT The VS-25TTS16SPbF of silicon controlled rectifiers is T -40 C to +125 C J specifically designed for medium power switching and 2 Package D PAK (TO-263AB) phase control applications. The glass passivation Circuit configuration Single SCR technology used has reliable operation up to 125 C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G10 glass fabric-based epoxy 3.5 5.5 with 4 oz. (140 m) copper A Aluminum IMS, R = 15 C/W 8.5 13.5 thCA Aluminum IMS with heatsink, R = 5 C/W 16.5 25.0 thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 16 T(AV) A I 25 RMS V /V 1600 V RRM DRM I 350 A TSM V 16 A, T = 25 C 1.25 V T J dV/dt 500 V/s dI/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM PEAK I /I , RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-25TTS16SPbF 1600 1600 10 Revision: 10-Aug-2018 Document Number: 94679 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-25TTS16SPbF www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 93 C, 180 conduction half sine wave 16 T(AV) C Maximum RMS on-state current I 25 RMS A 10 ms sine pulse, rated V applied 300 RRM Maximum peak, one-cycle, I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated V applied 450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 630 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A s Maximum on-state voltage drop V 16 A, T = 25 C 1.25 V TM J On-state slope resistance r 12.0 m t T = 125 C J Threshold voltage V 1.0 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = rated V /V RM DM R RRM DRM T = 125 C 10 J mA Anode supply = 6 V, Holding current I - 150 H resistive load, initial I = 1 A, T = 25 C T J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 10 C 60 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 45 mA GT J Anode supply = 6 V, resistive load, T = 125 C 20 J Anode supply = 6 V, resistive load, T = - 10 C 2.5 J Maximum required DC gate voltage to trigger V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 10-Aug-2018 Document Number: 94679 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
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DLE
DRALORIC / VISHAY
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Vishay / BC Components
Vishay / Beyschlag
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Vishay / Dale
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Vishay / Huntington
VISHAY / LITE-ON
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Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
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Vishay / Spectrol
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Vishay / Tansitor
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Vishay / Thin Film
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Vishay BC Components
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Vishay Beyschlag/Draloric/BC Components
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Vishay Dale
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VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
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Vishay Huntington Electric Inc.
Vishay Intertech
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Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
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VITRAMON (VISHAY)
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VSS
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