VS-25TTS08S-M3, VS-25TTS12S-M3 Series www.vishay.com Vishay Semiconductors Thyristor, Surface Mount, Phase Control SCR, 16 A FEATURES 4 Anode Meets MSL level 1, per J-STD-020, 2, 4 LF maximum peak of 260 C Designed and qualified according JEDEC -JESD 47 2 Material categorization: 3 for definitions of compliance please see 1 3 1 Cathode Gate www.vishay.com/doc 99912 2 TO-263AB (D PAK) APPLICATIONS Input rectification (soft start) PRODUCT SUMMARY Vishay input diodes, switches and output rectifiers which 2 Package TO-263AB (D PAK) are available in identical package outlines Diode variation Single SCR DESCRIPTION I 16 A T(AV) The VS-25TTS...S-M3 High Voltage Series of silicon V /V 800 V, 1200 V DRM RRM controlled rectifiers are specifically designed for medium V 1.25 V power switching and phase control applications. The glass TM passivation technology used has reliable operation up to I 45 mA GT 125 C junction temperature. T -40 to +125 C J OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G10 glass fabric-based epoxy 3.5 5.5 with 4 oz. (140 m) copper A Aluminum IMS, R = 15 C/W 8.5 13.5 thCA Aluminum IMS with heatsink, R = 5 C/W 16.5 25.0 thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 16 T(AV) A I 25 RMS V /V 800 to 1200 V RRM DRM I 350 A TSM V 16 A, T = 25 C 1.25 V T J dV/dt 500 V/s dI/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM PEAK I /I , RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-25TTS08S-M3 800 800 10 VS-25TTS12S-M3 1200 1200 Revision: 08-Jul-15 Document Number: 94895 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-25TTS08S-M3, VS-25TTS12S-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 93 C, 180 conduction half sine wave 16 T(AV) C Maximum RMS on-state current I 25 RMS A 10 ms sine pulse, rated V applied 300 Maximum peak, one-cycle, RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated V applied 450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 630 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A s Maximum on-state voltage drop V 16 A, T = 25 C 1.25 V TM J On-state slope resistance r 12.0 m t T = 125 C J Threshold voltage V 1.0 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = Rated V /V RM DM R RRM DRM T = 125 C 10 J Anode supply = 6 V, mA VS-25TTS08, Holding current I resistive load, initial I = 1 A, - 150 H T VS-25TTS12 T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = Open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 10 C 60 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 45 mA GT J Anode supply = 6 V, resistive load, T = 125 C 20 J Anode supply = 6 V, resistive load, T = - 10 C 2.5 J Maximum required DC gate voltage to trigger V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 08-Jul-15 Document Number: 94895 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000