X-On Electronics has gained recognition as a prominent supplier of VS-25TTS12STRR-M3 SCRs across the USA, India, Europe, Australia, and various other global locations. VS-25TTS12STRR-M3 SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-25TTS12STRR-M3 Vishay

VS-25TTS12STRR-M3 electronic component of Vishay
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See Product Specifications
Part No.VS-25TTS12STRR-M3
Manufacturer: Vishay
Category: SCRs
Description: SCRs New Input Thyristor - D2PAK-e3
Datasheet: VS-25TTS12STRR-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 1.0923 ea
Line Total: USD 8738.4 
Availability - 0
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 8000
Multiples : 8000
8000 : USD 1.0923

   
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We are delighted to provide the VS-25TTS12STRR-M3 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-25TTS12STRR-M3 and other electronic components in the SCRs category and beyond.

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VS-25TTS08S-M3, VS-25TTS12S-M3 Series www.vishay.com Vishay Semiconductors Thyristor, Surface Mount, Phase Control SCR, 16 A FEATURES Anode Meets MSL level 1, per J-STD-020, 2, 4 LF maximum peak of 245 C Designed and qualified according JEDEC -JESD 47 2 Material categorization: for definitions of 1 compliance please see www.vishay.com/doc?99912 1 3 3 Cathode Gate APPLICATIONS 2 D PAK (TO-263AB) Input rectification (soft start) Vishay input diodes, switches and output rectifiers which PRIMARY CHARACTERISTICS are available in identical package outlines I 16 A T(AV) V /V 800 V, 1200 V DESCRIPTION DRM RRM V 1.25 V The VS-25TTS...S-M3 high voltage series of silicon TM controlled rectifiers are specifically designed for medium I 45 mA GT power switching and phase control applications. The glass T -40 to +125 C J passivation technology used has reliable operation up to 2 Package D PAK (TO-263AB) 125 C junction temperature. Circuit configuration Single SCR OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G10 glass fabric-based epoxy 3.5 5.5 with 4 oz. (140 m) copper A Aluminum IMS, R = 15 C/W 8.5 13.5 thCA Aluminum IMS with heatsink, R = 5 C/W 16.5 25.0 thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 16 T(AV) A I 25 RMS V /V 800 to 1200 V RRM DRM I 350 A TSM V 16 A, T = 25 C 1.25 V T J dV/dt 500 V/s dI/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM PEAK I /I , RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-25TTS08S-M3 800 800 10 VS-25TTS12S-M3 1200 1200 Revision: 04-Jan-18 Document Number: 96414 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-25TTS08S-M3, VS-25TTS12S-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 93 C, 180 conduction half sine wave 16 T(AV) C Maximum RMS on-state current I 25 RMS A 10 ms sine pulse, rated V applied 300 RRM Maximum peak, one-cycle, I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated V applied 450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 630 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A s Maximum on-state voltage drop V 16 A, T = 25 C 1.25 V TM J On-state slope resistance r 12.0 m t T = 125 C J Threshold voltage V 1.0 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = rated V /V RM DM R RRM DRM T = 125 C 10 J Anode supply = 6 V, mA VS-25TTS08, Holding current I resistive load, initial I = 1 A, - 150 H T VS-25TTS12 T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 10 C 60 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 45 mA GT J Anode supply = 6 V, resistive load, T = 125 C 20 J Anode supply = 6 V, resistive load, T = - 10 C 2.5 J Maximum required DC gate voltage to trigger V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 04-Jan-18 Document Number: 96414 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC COMPONENTS
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BEYSCHLAG
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DLE
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