VS-MB High Voltage Series www.vishay.com Vishay Semiconductors Single Phase Bridge Rectifier, 25 A, 35 A FEATURES Universal, 3 way terminals: push-on, wrap around or solder High thermal conductivity package, electrically insulated case Center hole fixing Excellent power/volume ratio Nickel plated terminals solderable using lead (Pb)-free solder solder alloy Sn/Ag/Cu (SAC305) solde r temperature 260 C to 275 C UL E300359 approved D-34 Designed and qualified for industrial and consumer level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 25 A, 35 A O DESCRIPTION V 1400 V to 1600 V RRM A range of extremely compact, encapsulated single phase Package D-34 bridge rectifiers offering efficient and reliable operation. Circuit configuration Single phase bridge They are intended for use in general purpose an d instrumentation applications. MAJOR RATINGS AND CHARACTERISTICS VALUES VALUES SYMBOL CHARACTERISTICS UNITS 26MB..A 36MB..A 25 35 A I O T 70 55 C C 50 Hz 400 475 I A FSM 60 Hz 420 500 50 Hz 790 1130 2 2 I t A s 60 Hz 725 1030 V Range 1400 to 1600 V RRM T -55 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM TYPE VOLTAGE PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T MAXIMUM J NUMBER CODE V V mA 26MB..A 140 1400 1500 2 36MB..A 160 1600 1700 Revision: 15-Jan-2019 Document Number: 93564 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MB High Voltage Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 26MB..A 36MB..A Resistive or inductive load 25 35 A Maximum DC output current I Capacitive load 20 28 O at case temperature 65 60 C t = 10 ms 400 475 No voltage reapplied t = 8.3 ms 420 500 Maximum peak, one cycle I A FSM non-repetitive forward current t = 10 ms 335 400 100 % V RRM reapplied t = 8.3 ms 350 420 Initial T = T maximum t = 10 ms J J 790 1130 No voltage reapplied t = 8.3 ms 725 1030 2 2 2 Maximum I t for fusing I t A s t = 10 ms 560 800 100 % V RRM reapplied t = 8.3 ms 512 730 2 2 I t for time t = I t x t x x 2 2 2 Maximum I t for fusing I t 5.6 11.3 kA s 0.1 t 10 ms, V = 0 V x RRM (16.7 % x x I < I < x I ), F(AV) F(AV) Low level of threshold voltage V 0.70 0.74 F(TO)1 T maximum J V High level of threshold voltage V (I > x I ), T maximum 0.75 0.79 F(TO)2 F(AV) J (16.7 % x x I < I < x I ), F(AV) F(AV) Low level forward slope resistance r 7.0 5.5 t1 T maximum J m High level forward slope resistance r (I > x I ), T maximum 6.4 5.2 t2 F(AV) J T = 25 C, t = 400 s, I = 40 A (26MB), J p FM pk Maximum forward voltage drop V 1.25 1.3 V FM I = 55 A (36MB) FM pk Maximum DC reverse current per diode I T = 25 C, at V 10 10 A RRM J RRM RMS isolation voltage base plate V f = 50 Hz, t = 1 s 2700 2700 V ISOL THERMAL AND MECHANICAL SPECIFICATIONS VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 26MB-A 36MB-A Junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, R 1.7 1.35 thJC junction to case per bridge K/W Maximum thermal resistance, R Mounting surface, smooth, flat, and greased 0.2 thCS case to heatsink Mounting torque 10 % Bridge to heatsink 2.0 Nm Approximate weight 20 g Revision: 15-Jan-2019 Document Number: 93564 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000