VS-VSKEU300/12PbF
www.vishay.com
Vishay Semiconductors
HEXFRED Ultrafast Diodes, 300 A
(INT-A-PAK Power Modules)
FEATURES
Electrically isolated: DCB base plate
Standard JEDEC package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
Case style INT-A-PAK
Designed and qualified for industrial level
INT-A-PAK
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
REMARKS
PRIMARY CHARACTERISTICS
Product reliability results valid for T = 150 C
J
V 1200 V
R
Recommended operation temperature T = 150 C
op
V (typical) at 300 A at 25 C 2.18 V
F
t (typical) at 45 A 233 ns
rr
I at T 300 A at 60 C
F(DC) C
Package INT-A-PAK
Circuit configuration Single diode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V 1200 V
R
T = 25 C 375
C
Continuous forward current I
F
T = 60 C 300 A
C
Single pulse forward current I T = 25 C 2400
FSM J
T = 25 C 1040
C
Maximum power dissipation P W
D
T = 60 C 750
C
RMS isolation voltage V 50 Hz, circuit to base, all terminal shorted, t = 1 s 3500 V
ISOL
Junction temperature range T -40 to +150
J
C
Storage temperature range T -40 to +150
Stg
ELECTRICAL SPECIFICATIONS PER LEG (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V I = 500 A 1200 - -
BR R
I = 300 A - 2.18 2.23 V
F
Maximum forward voltage V
FM
I = 300 A, T = 150 C - 2.24 2.47
F J
V = 1200 V - 0.06 0.2
R
Maximum reverse leakage current I mA
RM
T = 150 C, V = 1200 V - - 20
J R
Revision: 05-Jan-18 Document Number: 94670
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-VSKEU300/12PbF
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS
T = 25 C -3.5 -
J
Diode reverse recovery charge Q C
rr
T = 125 C - 10.4 -
J
I = 45 A
F
T = 25 C - 233 -
J
Reverse recovery time t V = 400 V ns
rr R
T = 125 C - 396 -
J
dI /dt = 500 A/s
F
T = 25 C - 30 -
J
Reverse recovery current I A
rr
T = 125 C - 53 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum internal thermal resistance,
R DC operation 0.12
thJC
junction to case per leg
C/W
Typical thermal resistance,
R Mounting surface flat, smooth, and greased 0.05
thCS
case to heatsink per module
to heatsink A mounting compound is recommended and the 4
Mounting torque 10 % torque should be rechecked after a period of 3 hours Nm
busbar 6
to allow for the spread of the compound.
200 g
Approximate weight
7.1 oz.
Case style INT-A-PAK
1000 100
175 C
10
150 C
T = 150 C
J
100 1
125 C
T = 125 C
J
0.1
25 C
T = 25 C
J
10 0.01
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 200 400 600 800 1000 1200
V - Reverse Voltage (V)
V -Forward Voltage Drop (V)
R
FM
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Value of Reverse Current vs. Reverse Voltage
Revision: 05-Jan-18 Document Number: 94670
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Instantaneous Forward Current (A)
F
I Reverse current (mA)
RM