X-On Electronics has gained recognition as a prominent supplier of BT158W-1200TQ SCRs across the USA, India, Europe, Australia, and various other global locations. BT158W-1200TQ SCRs are a product manufactured by WeEn Semiconductor. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

BT158W-1200TQ WeEn Semiconductor

BT158W-1200TQ electronic component of WeEn Semiconductor
BT158W-1200TQ WeEn Semiconductor
BT158W-1200TQ SCRs
BT158W-1200TQ  Semiconductors

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See Product Specifications
Part No. BT158W-1200TQ
Manufacturer: WeEn Semiconductor
Category: SCRs
Description: SCRs BT158W-1200TQ/TO-247
Datasheet: BT158W-1200TQ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.8144 ea
Line Total: USD 4.81 
Availability - 153
Ship by Wed. 22 Jan to Mon. 27 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
153
Ship by Wed. 22 Jan to Mon. 27 Jan
MOQ : 1
Multiples : 1
1 : USD 4.8144
10 : USD 4.0644
30 : USD 3.616
90 : USD 3.1658
480 : USD 2.9577
960 : USD 2.8641

334
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 4.796
25 : USD 3.586
100 : USD 3.146
240 : USD 3.146
480 : USD 3.036
1200 : USD 3.025
2640 : USD 2.992
5040 : USD 2.97

47
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 5.81
4 : USD 4.956
10 : USD 4.69
25 : USD 4.62
90 : USD 4.522

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Maximum Operating Temperature
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BT158W-1200TQ from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BT158W-1200TQ and other electronic components in the SCRs category and beyond.

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BT158W-1200T SCR 20 April 2017 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a SOT429N (TO247) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 2. Features and benefits High thermal cycling performance Planar passivated for voltage ruggedness and reliability High voltage capacity Very high current surge capability 3. Applications Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Uninterruptible Power Supply (UPS) Solid State Relay (SSR) Traction battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 1200 V DRM state voltage V repetitive peak reverse - - 1200 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 1100 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 1210 A j(init) t = 8.3 ms p T junction temperature - - 150 C j I average on-state half sine wave T 117 C - - 80 A T(AV) mb current I RMS on-state current half sine wave T 117 C Fig. 1 - - 126 A T(RMS) mb Fig. 2 Fig. 3WeEn Semiconductors BT158W-1200T SCR Symbol Parameter Conditions Min Typ Max Unit Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - - 70 mA GT D T j Fig. 8 Dynamic characteristics dV /dt rate of rise of off-state V = 800 V T = 125 C R = 100 1500 - - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode A K G 2 A anode sym037 3 G gate mb A mounting base connected to anode 1 2 3 TO-247 (SOT429N) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT158W-1200T TO-247 Plastic single-ended through-hole package heatsink mounted 1 SOT429N mounting hole 3-lead TO-247 BT158W-1200T All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 20 April 2017 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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WE4
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WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors
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