VS-MB High Voltage Series
www.vishay.com
Vishay Semiconductors
Single Phase Bridge Rectifier, 25 A, 35 A
FEATURES
Universal, 3 way terminals:
push-on, wrap around or solder
High thermal conductivity package, electrically
insulated case
Center hole fixing
Excellent power/volume ratio
Nickel plated terminals solderable using lead (Pb)-free
solder; solder alloy Sn/Ag/Cu (SAC305); solder
temperature 260 C to 275 C
GBPC...A GBPC...W
UL E300359 approved
Designed and qualified for industrial and consumer level
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I 25 A, 35 A
O
DESCRIPTION
V 1400 V to 1600 V
RRM
A range of extremely compact, encapsulated single phase
Package GBPC...A, GBPC...W
bridge rectifiers offering efficient and reliable operation.
Circuit configuration Single phase bridge
They are intended for use in general purpose and
instrumentation applications.
MAJOR RATINGS AND CHARACTERISTICS
VALUES VALUES
SYMBOL CHARACTERISTICS UNITS
26MB..A 36MB..A
25 35 A
I
O
T 70 55 C
C
50 Hz 400 475
I A
FSM
60 Hz 420 500
50 Hz 790 1130
2 2
I t A s
60 Hz 725 1030
V Range 1400 to 1600 V
RRM
T -55 to +150 C
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM
RRM RSM RRM
TYPE VOLTAGE
PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T MAXIMUM
J
NUMBER CODE
V V mA
26MB..A 140 1400 1500
2
36MB..A
160 1600 1700
Revision: 10-Oct-2018 Document Number: 93564
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MB High Voltage Series
www.vishay.com
Vishay Semiconductors
FORWARD CONDUCTION
VALUES VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
26MB..A 36MB..A
Resistive or inductive load 25 35
A
Maximum DC output current
I Capacitive load 20 28
O
at case temperature
65 60 C
t = 10 ms 400 475
No voltage
reapplied
t = 8.3 ms 420 500
Maximum peak, one cycle
I A
FSM
non-repetitive forward current
t = 10 ms 335 400
100 % V
RRM
reapplied
t = 8.3 ms 350 420
Initial
T = T maximum
t = 10 ms J J 790 1130
No voltage
reapplied
t = 8.3 ms 725 1030
2 2 2
Maximum I t for fusing I t A s
t = 10 ms 560 800
100 % V
RRM
reapplied
t = 8.3 ms 512 730
2 2
I t for time t = I t x t ;
x x
2 2 2
Maximum I t for fusing I t 5.6 11.3 kA s
0.1 t 10 ms, V = 0 V
x RRM
(16.7 % x x I < I < x I ),
F(AV) F(AV)
Low level of threshold voltage V 0.70 0.74
F(TO)1
T maximum
J
V
High level of threshold voltage V (I > x I ), T maximum 0.75 0.79
F(TO)2 F(AV) J
(16.7 % x x I < I < x I ),
F(AV) F(AV)
Low level forward slope resistance r 7.0 5.5
t1
T maximum
J
m
High level forward slope resistance r (I > x I ), T maximum 6.4 5.2
t2 F(AV) J
T = 25 C, t = 400 s, I = 40 A (26MB),
J p FM pk
Maximum forward voltage drop V 1.25 1.3 V
FM
I = 55 A (36MB)
FM pk
Maximum DC reverse current per diode I T = 25 C, at V 10 10 A
RRM J RRM
RMS isolation voltage base plate V f = 50 Hz, t = 1 s 2700 2700 V
ISOL
THERMAL AND MECHANICAL SPECIFICATIONS
VALUES VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
26MB-A 36MB-A
Junction and storage
T , T -55 to 150 C
J Stg
temperature range
Maximum thermal resistance,
R 1.7 1.35
thJC
junction to case per bridge
K/W
Maximum thermal resistance,
R Mounting surface, smooth, flat, and greased 0.2
thCS
case to heatsink
Mounting torque 10 % Bridge to heatsink 2.0 Nm
Approximate weight 20 g
Revision: 10-Oct-2018 Document Number: 93564
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000