X-On Electronics has gained recognition as a prominent supplier of T660N26TOF SCRs across the USA, India, Europe, Australia, and various other global locations. T660N26TOF SCRs are a product manufactured by Infineon. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

T660N26TOF Infineon

T660N26TOF electronic component of Infineon
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See Product Specifications
Part No. T660N26TOF
Manufacturer: Infineon
Category: SCRs
Description: SCRs PCT 2600V 660A
Datasheet: T660N26TOF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 180.114 ea
Line Total: USD 180.11 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
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0
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 180.114
12 : USD 180.103

   
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We are delighted to provide the T660N26TOF from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the T660N26TOF and other electronic components in the SCRs category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor T660N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Hchstzulssige Werte / Maximum rated values 2200 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM enndaten 2400 V repetitive peak forward off-state and reverse voltages 2600 V Elektrische Eigenschaften 2200 V Vorwrts-Stossspitzensperrspannung T = -40C... T V vj vj max DSM 2400 V non-repetitive peak forward off-state voltage 2600 V 2300 V Rckwrts-Stossspitzensperrspannung T = +25C... T V vj vj max RSM 2500 V non-repetitive peak reverse voltage 2700 V 1500 A Durchlassstrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 660 A Dauergrenzstrom T = 85 C I C TAVM average on-state current 970 A Dauergrenzstrom T = 55 C, = 180sin, t = 10 ms I C P TAVM average on-state current 1520 A Durchlastrom-Effektivwert I TRMS RMS on-state current 13000 A Stossstrom-Grenzwert T = 25 C C, t = 10 ms I vj P TSM 11500 A T = T , t = 10 ms surge current vj vj max P 845 10 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 660 10 As It-value T = T , t = 10 ms vj vj max P DIN IEC 60747-6 150 A/s Kritische Stromsteilheit (di /dt) T cr f = 50 Hz, i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current 1000 V/s Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th critical rate of rise of off-state voltage 5.Kennbuchstabe / 5 letter F Charakteristische Werte / Characteristic values max. 2,53 V Durchlassspannung T = T , i = 2850 A v vj vj max T T max. 1,32 V on-state voltage T = T , i = 650 A vj vj max T 1,00V Schleusenspannung T = T V vj vj max (TO) threshold voltage 0,500 m Ersatzwiderstand T = T r vj vj max T slope resistance Durchlasskennlinie 200 A i 3300 A T = T A= 1,245E+00 T vj vj max on-state characteristic B= 3,716E-04 C= -1,040E-01 v = A + B i + C ln(i + 1) + D i T T T T D= 1,970E-02 Zndstrom T = 25 C, v = 12V I max. 250mA vj D GT gate trigger current Zndspannung T = 25 C, v = 12V V max. 2,2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 12V I max. 10 mA vj vj max D GD gate non-trigger current T = T , v = 0,5 V max. 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 12V I max. 300mA vj D H holding current Einraststrom T = 25C, v = 12V, R 10 I max. 1500mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 100mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 60747-6 t max. 4s gd gate controlled delay time T = 25 C, i = 1 A, di /dt = 1 A/s vj GM G prepared by: H.Sandmann date of publication: 2009-03-04 approved by: M.Leifeld revision: 1.0 IFBIP D AEC / 2009-03-04, H.Sandmann A 04/09 Seite/page 1/10 Datenblatt / Data sheet N Netz-Thyristor T660N Phase Control Thyristor Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t typ. 300s vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM Thermische Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s D T th 4.Kennbuchstabe / 4 letter O Mechanische Eigenschaften Thermische Eigenschaften / Thermal properties Innerer Wrmewiderstand Khlflche / cooling surface R thJC beidseitig / two-sided, = 180sin max. 0,0330 C/W thermal resistance, junction to case beidseitig / two-sided, DC max. 0,0300 C/W Anode / anode, = 180sin max. 0,0537 C/W Anode / anode, DC max. 0,0511 C/W Kathode / cathode, = 180sin max. 0,0816 C/W Kathode / cathode, DC max. 0,0732 C/W Khlflche / cooling surface bergangs-Wrmewiderstand R thCH beidseitig / two-sides max. 0,005 C/W thermal resistance, case to heatsink max. 0,010 einseitig / single-sides C/W 125C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+125C c op operating temperature Lagertemperatur T -40...+150C stg storage temperature Mechanische Eigenschaften / Mechanical properties Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft F 10,5...21kN clamping force Steueranschlsse Gate (flat) A 2,8x0,5 mm control terminals Gate (round, based on AMP 60598) 1,5 mm Kathode / cathode A 4,8x0,5 mm Gewicht G typ. 280g weight Kriechstrecke 20mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance IFBIP D AEC / 2009-03-04, H.Sandmann A 04/09 Seite/page 2/10

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