X-On Electronics has gained recognition as a prominent supplier of VS-40TPS12AL-M3 SCRs across the USA, India, Europe, Australia, and various other global locations. VS-40TPS12AL-M3 SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-40TPS12AL-M3 Vishay

VS-40TPS12AL-M3 electronic component of Vishay
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Part No.VS-40TPS12AL-M3
Manufacturer: Vishay
Category: SCRs
Description: SCRs Single SCR Alt VS-40TPS12A-M3
Datasheet: VS-40TPS12AL-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.652 ea
Line Total: USD 3.65 
Availability - 563
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
563
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 3.652
10 : USD 3.102
25 : USD 2.541
100 : USD 2.189
500 : USD 1.991

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
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We are delighted to provide the VS-40TPS12AL-M3 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-40TPS12AL-M3 and other electronic components in the SCRs category and beyond.

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VS-40TPS12L-M3, VS-40TPS12AL-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES 2 Low I parts available GT (A) Designed and qualified according to JEDEC - JESD 47 Flexible solution for reliable AC power 1 rectification 2 3 Easy control peak current at charger power up to reduce 1 (K) (G) 3 TO-247AD 3L passive / electromechanical components Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS Typical usage is in input rectification crowbar (soft start) I 35 A T(AV) and AC switch in motor control, UPS, welding and battery V /V 1200 V DRM RRM charge V 1.45 V TM I 150 mA GT DESCRIPTION T -40 C to +125 C J The VS-40TPS12.. high voltage series of silicon controlled Package TO-247AD 3L rectifiers are specifically designed for medium power Circuit configuration Single SCR switching and phase control applications. AEC-Q101 qualified P/N available (VS-40TPS12LHM3, VS-40TPS12ALHM3). MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 35 T(AV) A I 55 RMS V /V 1200 V RRM DRM I 600 A TSM V 40 A, T = 25 C 1.45 V T J dv/dt 1000 V/s di/dt 100 A/s T -40 to +125 C J VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I /I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-40TPS12AL-M3 1200 1300 10 VS-40TPS12L-M3 1200 1300 Revision: 31-Jul-2018 Document Number: 95993 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-40TPS12L-M3, VS-40TPS12AL-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 79 C, 180 conduction half sine wave 35 T(AV) C Maximum continuous RMS I 55 T(RMS) on-state current as AC switch A 10 ms sine pulse, rated V applied 500 Maximum peak, one-cycle RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 600 Initial 10 ms sine pulse, rated V applied 1250 RRM 2 2 2 T = T max. Maximum I t for fusing I t J J A s 10 ms sine pulse, no voltage reapplied 1760 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 17 600 A s Low level value of threshold voltage V 1.02 T(TO)1 V High level value of threshold voltage V 1.23 T(TO)2 T = 125 C J Low level value of on-state slope resistance r 9.74 t1 m High level value of on-state slope resistance r 7.50 t2 Maximum peak on-state voltage V 110 A, T = 25 C 1.85 V TM J Maximum rate of rise of turned-on current di/dt T = 25 C 100 A/s J Maximum holding current I Anode supply = 6 V, resistive load, initial T = 1 A, I = 25 C 300 H J T Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 350 L J mA T = 25 C 0.5 J Maximum reverse and direct leakage current I I V = rated V /V RRM/ DRM R RRM DRM T = 125 C 10 J Maximum rate of rise of off-state voltage 500 40TPS12A dv/dt T = T maximum, linear to 80 % V , R - k = 100 V/s J J DRM g Maximum rate of rise of off-state voltage 1000 40TPS12 TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 10 GM W Maximum average gate power P 2.5 G(AV) Maximum peak gate current I 2.5 A GM Maximum peak negative gate voltage -V 10 V GM T = -40 C 2.0 J Anode supply = 6 V Maximum required DC gate voltage to trigger V T = 25 C 1.7 V GT J resistive load T = 125 C 1.3 J T = -40 C 200 J Anode supply = 6 V T = 25 C 150 J Maximum required DC gate current to trigger I resistive load mA GT T = 125 C 80 J T = 25 C, for 40TPS12A 40 J Maximum DC gate voltage not to trigger V 0.25 V GD for 40TPS12 T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 6mA GD for 40TPS12 Maximum DC gate voltage not to trigger V 0.15 V GD for 40TPS12A T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 1mA GD for 40TPS12A Revision: 31-Jul-2018 Document Number: 95993 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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