VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES Designed and qualified according to 2 (A) JEDEC-JESD47 140 C max. operating junction temperature Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 3 2 1 1 (K) Available (G) 3 TO-220AB APPLICATIONS Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding, and battery PRODUCT SUMMARY charge Package TO-220AB DESCRIPTION Diode variation Single SCR The VS-40TTS12... high voltage series of silicon controlled I 25 A T(AV) rectifiers are specifically designed for medium power V /V 1200 V DRM RRM switching and phase control applications. The glass V 1.6 V TM passivation technology used has reliable operation up to I 35 mA GT 140 C junction temperature. T - 40 C to 140 C J MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 25 T(AV) A I 40 RMS V /V 1200 V RRM DRM I 350 A TSM V T = 25 C 1.6 V T J dV/dt 500 V/s dI/dt 150 A/s T - 40 to 140 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM RRM DRM T J PART NUMBER REVERSE VOLTAGE PEAK DIRECT VOLTAGE C V V VS-40TTS12PbF, VS-40TTS12-M3 1200 1200 - 25 to 140 Revision: 26-Jul-13 Document Number: 94390 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-40TTS12PbF, VS-40TTS12-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 93 C, 180 conduction half sine wave 25 T(AV) C Maximum RMS on-state current I 40 RMS A 10 ms sine pulse, rated V applied 300 Maximum peak, one-cycle RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated V applied 450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 630 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 6300 A s Maximum on-state voltage V 80 A, T = 25 C 1.6 V TM J Low level value of on-state slope resistance r 11.4 m t T = 140 C J Low level value of threshold voltage V 0.96 V T(TO) T = 25 C 0.5 Maximum reverse and direct leakage J I /I V = Rated V /V RRM DRM R RRM DRM current T = 140 C 12 J mA Anode supply = 6 V, resistive load, initial I = 1 A, T Holding current I 100 H T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 C, V = R - k = Open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Maximum required DC gate current to I Anode supply = 6 V, resistive load, T = 25 C 35 mA GT J trigger Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 1.3 GT J voltage to trigger V Maximum DC gate voltage not to trigger V 0.2 GD T = 140 C, V = Rated value J DRM Maximum DC gate current not to trigger I 1.5 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 140 C J Typical turn-off time t 110 q THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T - 40 to 140 C J Stg temperature range Maximum thermal resistance, R DC operation 0.8 thJC junction to case Maximum thermal resistance, R 60 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-220AB 40TTS12 Revision: 26-Jul-13 Document Number: 94390 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000