VS-25TTS08S-M3, VS-25TTS12S-M3 Series
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Vishay Semiconductors
Thyristor, Surface Mount, Phase Control SCR, 16 A
FEATURES
Anode
Meets MSL level 1, per J-STD-020,
2, 4
LF maximum peak of 245 C
Designed and qualified according
JEDEC -JESD 47
2
Material categorization: for definitions of
1
compliance please see www.vishay.com/doc?99912
1 3
3
Cathode Gate
APPLICATIONS
2
D PAK (TO-263AB)
Input rectification (soft start)
Vishay input diodes, switches and output rectifiers which
PRIMARY CHARACTERISTICS
are available in identical package outlines
I 16 A
T(AV)
V /V 800 V, 1200 V DESCRIPTION
DRM RRM
V 1.25 V The VS-25TTS...S-M3 high voltage series of silicon
TM
controlled rectifiers are specifically designed for medium
I 45 mA
GT
power switching and phase control applications. The glass
T -40 to +125 C
J
passivation technology used has reliable operation up to
2
Package D PAK (TO-263AB)
125 C junction temperature.
Circuit configuration Single SCR
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G10 glass fabric-based epoxy
3.5 5.5
with 4 oz. (140 m) copper
A
Aluminum IMS, R = 15 C/W 8.5 13.5
thCA
Aluminum IMS with heatsink, R = 5 C/W 16.5 25.0
thCA
Note
2
T = 55 C, T = 125 C, footprint 300 mm
A J
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I Sinusoidal waveform 16
T(AV)
A
I 25
RMS
V /V 800 to 1200 V
RRM DRM
I 350 A
TSM
V 16 A, T = 25 C 1.25 V
T J
dV/dt 500 V/s
dI/dt 150 A/s
T -40 to +125 C
J
VOLTAGE RATINGS
V , MAXIMUM PEAK V , MAXIMUM PEAK I /I ,
RRM DRM RRM DRM
PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C
V V mA
VS-25TTS08S-M3 800 800
10
VS-25TTS12S-M3 1200 1200
Revision: 04-Jan-18 Document Number: 96414
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-25TTS08S-M3, VS-25TTS12S-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
TYP. MAX.
Maximum average on-state current I T = 93 C, 180 conduction half sine wave 16
T(AV) C
Maximum RMS on-state current I 25
RMS
A
10 ms sine pulse, rated V applied 300
RRM
Maximum peak, one-cycle,
I
TSM
non-repetitive surge current
10 ms sine pulse, no voltage reapplied 350
10 ms sine pulse, rated V applied 450
RRM
2 2 2
Maximum I t for fusing I t A s
10 ms sine pulse, no voltage reapplied 630
2 2 2
Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A s
Maximum on-state voltage drop V 16 A, T = 25 C 1.25 V
TM J
On-state slope resistance r 12.0 m
t
T = 125 C
J
Threshold voltage V 1.0 V
T(TO)
T = 25 C 0.5
J
Maximum reverse and direct leakage current I /I V = rated V /V
RM DM R RRM DRM
T = 125 C 10
J
Anode supply = 6 V,
mA
VS-25TTS08,
Holding current I resistive load, initial I = 1 A, - 150
H T
VS-25TTS12
T = 25 C
J
Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200
L J
Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = open 500 V/s
J J DRM g
Maximum rate of rise of turned-on current dI/dt 150 A/s
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum peak gate power P 8.0
GM
W
Maximum average gate power P 2.0
G(AV)
Maximum peak positive gate current + I 1.5 A
GM
Maximum peak negative gate voltage - V 10 V
GM
Anode supply = 6 V, resistive load, T = - 10 C 60
J
Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 45 mA
GT J
Anode supply = 6 V, resistive load, T = 125 C 20
J
Anode supply = 6 V, resistive load, T = - 10 C 2.5
J
Maximum required DC gate voltage to trigger V Anode supply = 6 V, resistive load, T = 25 C 2.0
GT J
V
Anode supply = 6 V, resistive load, T = 125 C 1.0
J
Maximum DC gate voltage not to trigger V 0.25
GD
T = 125 C, V = rated value
J DRM
Maximum DC gate current not to trigger I 2.0 mA
GD
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t T = 25 C 0.9
gt J
Typical reverse recovery time t 4 s
rr
T = 125 C
J
Typical turn-off time t 110
q
Revision: 04-Jan-18 Document Number: 96414
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000