VS-2N681, VS-2N5205 Series
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Vishay Semiconductors
Phase Control Thyristor RMS SCRs, 25 A, 35 A
FEATURES
General purpose stud mounted
Broad forward and reverse voltage range -
through 1200 V
Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
TO-48 (TO-208AA)
PRIMARY CHARACTERISTICS
I 16 A, 22 A
T(AV)
I 25 A, 35 A
T(RMS)
25 V, 50 V, 100 V, 150 V, 200 V, 250 V,
V /V 300 V, 400 V, 500 V, 600 V, 700 V, 800 V,
DRM RRM
1000 V 1200 V
V 2.3 V
TM
I 60 mA
GT
T -40 C to +125 C
J
Package TO-48 (TO-208AA)
Circuit configuration Single SCR
MAJOR RATINGS AND CHARACTERISTICS
VALUES VALUES
PARAMETER TEST CONDITIONS UNITS
2N681-92 2N5205-07
(1) (1)
16 22 A
I
T(AV)
(1)
T -65 to +65 -40 to +40 C
C
I 25 35 A
T(RMS)
50 Hz 145 285
I A
TSM
(1) (1)
60 Hz 150 300
50 Hz 103 410
2 2
I t A s
60 Hz 94 375
I 40 40 mA
GT
(1)
dV/dt - 100 V/s
dI/dt 75 to 100 100 A/s
V Range 25 to 800 600 to 1200 V
DRM
V Range 25 to 800 600 to 1200 V
RRM
(1) (1)
T -65 to +125 -40 to +125 C
J
Note
(1)
JEDEC registered value
Revision: 21-Sep-17 Document Number: 93706
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-2N681, VS-2N5205 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS (APPLIED GATE VOLTAGE ZERO OR NEGATIVE)
V /V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE
RRM DRM RSM
TYPE NUMBER REVERSE AND OFF-STATE VOLTAGE PEAK REVERSE VOLTAGE (t < 5 ms) T
p J
V V
VS-2N681 25 35
VS-2N682 50 75
VS-2N683 100 150
VS-2N684 150 200
VS-2N685 200 300
VS-2N686 250 350
-65 C to +125 C
VS-2N687 300 400
VS-2N688 400 500
VS-2N689 500 600
VS-2N690 600 720
VS-2N691 700 840
VS-2N692 800 960
VS-2N5205 800 960
VS-2N5206 1000 1200 -40 C to +125 C
VS-2N5207 1200 1440
Note
JEDEC registered values
ABSOLUTE MAXIMUM RATINGS
VALUES VALUES
PARAMETER SYMBOL TEST CONDITIONS UNITS
2N681-92 2N5205-07
(1) (1)
16 22 A
Maximum average on-state
I 180 half sine wave conduction
T(AV)
(1) (1)
current at case temperature
-65 to +65 -40 to +40 C
Maximum RMS on-state current I 2535A
T(RMS)
50 Hz half cycle sine wave Following any rated
145 285
or 6 ms rectangular pulse load condition, and
with rated V applied
60 Hz half cycle sine wave
RRM
(1) (1)
150 300
following surge
or 5 ms rectangular pulse
Maximum peak, one-cycle
I A
TSM
non-repetitive surge current
50 Hz half cycle sine wave Same conditions as
170 340
or 6 ms rectangular pulse above except with
V applied following
60 Hz half cycle sine wave
RRM
180 355
surge = 0
or 5 ms rectangular pulse
t = 10 ms Rated V applied 103 410
RRM
2
Maximum I t capability for fusing following surge,
t = 8.3 ms 94 375
2 2
initial T = 125 C
I t J A s
2
t = 10 ms 145 580
Maximum I t capability for V = 0 following
RRM
individual device fusing surge, initial T = 125 C
t = 8.3 ms J 135 530
2
Maximum I t capability for t = 0.1 ms to 10 ms, initial T < 125 C
J
2 (2) 2
I t 1450 5800 A s
individual device fusing V applied following surge = 0
RRM
T = 25 C, I = 16 A (50 A peak) 2N681,
J T(AV)
(1) (1)
Maximum peak on-state voltage V 2 2.3 V
TM
I = 22 A (70 A peak) 2N5204
T(AV)
(1)
20 at 25 C 200 at
Maximum holding current I Anode supply 24 V, initial I = 1.0 A mA
H T
(typical) -40 C
Notes
(1)
JEDEC registered value
(2) 2 2
I t for time t = I t t
x x
Revision: 21-Sep-17 Document Number: 93706
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000