VS-2N681, VS-2N5205 Series www.vishay.com Vishay Semiconductors Phase Control Thyristor RMS SCRs, 25 A, 35 A FEATURES General purpose stud mounted Broad forward and reverse voltage range - through 1200 V Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TO-48 (TO-208AA) PRIMARY CHARACTERISTICS I 16 A, 22 A T(AV) I 25 A, 35 A T(RMS) 25 V, 50 V, 100 V, 150 V, 200 V, 250 V, V /V 300 V, 400 V, 500 V, 600 V, 700 V, 800 V, DRM RRM 1000 V 1200 V V 2.3 V TM I 60 mA GT T -40 C to +125 C J Package TO-48 (TO-208AA) Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS VALUES VALUES PARAMETER TEST CONDITIONS UNITS 2N681-92 2N5205-07 (1) (1) 16 22 A I T(AV) (1) T -65 to +65 -40 to +40 C C I 25 35 A T(RMS) 50 Hz 145 285 I A TSM (1) (1) 60 Hz 150 300 50 Hz 103 410 2 2 I t A s 60 Hz 94 375 I 40 40 mA GT (1) dV/dt - 100 V/s dI/dt 75 to 100 100 A/s V Range 25 to 800 600 to 1200 V DRM V Range 25 to 800 600 to 1200 V RRM (1) (1) T -65 to +125 -40 to +125 C J Note (1) JEDEC registered value Revision: 21-Sep-17 Document Number: 93706 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-2N681, VS-2N5205 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS (APPLIED GATE VOLTAGE ZERO OR NEGATIVE) V /V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE RRM DRM RSM TYPE NUMBER REVERSE AND OFF-STATE VOLTAGE PEAK REVERSE VOLTAGE (t < 5 ms) T p J V V VS-2N681 25 35 VS-2N682 50 75 VS-2N683 100 150 VS-2N684 150 200 VS-2N685 200 300 VS-2N686 250 350 -65 C to +125 C VS-2N687 300 400 VS-2N688 400 500 VS-2N689 500 600 VS-2N690 600 720 VS-2N691 700 840 VS-2N692 800 960 VS-2N5205 800 960 VS-2N5206 1000 1200 -40 C to +125 C VS-2N5207 1200 1440 Note JEDEC registered values ABSOLUTE MAXIMUM RATINGS VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 2N681-92 2N5205-07 (1) (1) 16 22 A Maximum average on-state I 180 half sine wave conduction T(AV) (1) (1) current at case temperature -65 to +65 -40 to +40 C Maximum RMS on-state current I 2535A T(RMS) 50 Hz half cycle sine wave Following any rated 145 285 or 6 ms rectangular pulse load condition, and with rated V applied 60 Hz half cycle sine wave RRM (1) (1) 150 300 following surge or 5 ms rectangular pulse Maximum peak, one-cycle I A TSM non-repetitive surge current 50 Hz half cycle sine wave Same conditions as 170 340 or 6 ms rectangular pulse above except with V applied following 60 Hz half cycle sine wave RRM 180 355 surge = 0 or 5 ms rectangular pulse t = 10 ms Rated V applied 103 410 RRM 2 Maximum I t capability for fusing following surge, t = 8.3 ms 94 375 2 2 initial T = 125 C I t J A s 2 t = 10 ms 145 580 Maximum I t capability for V = 0 following RRM individual device fusing surge, initial T = 125 C t = 8.3 ms J 135 530 2 Maximum I t capability for t = 0.1 ms to 10 ms, initial T < 125 C J 2 (2) 2 I t 1450 5800 A s individual device fusing V applied following surge = 0 RRM T = 25 C, I = 16 A (50 A peak) 2N681, J T(AV) (1) (1) Maximum peak on-state voltage V 2 2.3 V TM I = 22 A (70 A peak) 2N5204 T(AV) (1) 20 at 25 C 200 at Maximum holding current I Anode supply 24 V, initial I = 1.0 A mA H T (typical) -40 C Notes (1) JEDEC registered value (2) 2 2 I t for time t = I t t x x Revision: 21-Sep-17 Document Number: 93706 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000