VS-25TTS12SLHM3 www.vishay.com Vishay Semiconductors Thyristor, Surface Mount, Phase Control SCR, 16 A FEATURES 4 Anode Meets MSL level 1, per J-STD-020, 2, 4 LF maximum peak of 260 C AEC-Q101 qualified Meets JESD 201 class 1A whisker test 2 Flexible solution for reliable AC power 3 rectification 1 3 1 Cathode Gate Easy control peak current at charger power up to reduce 2 D PAK (TO-263AB) passive / electromechanical components Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS On-board and off-board EV / HEV battery chargers I 16 A T(AV) Renewable energy inverters V /V 1200 V DRM RRM V 1.25 V TM DESCRIPTION I 45 mA GT The VS-25TTS12SLHM3 high voltage series of silicon T -40 to +125 C J controlled rectifiers are specifically designed for medium 2 Package D PAK (TO-263AB) power switching and phase control applications. Circuit configuration Single SCR OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS NEMA FR-4 or G10 glass fabric-based epoxy 3.5 5.5 with 4 oz. (140 m) copper A Aluminum IMS, R = 15 C/W 8.5 13.5 thCA Aluminum IMS with heatsink, R = 5 C/W 16.5 25.0 thCA Note 2 T = 55 C, T = 125 C, footprint 300 mm A J MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 16 T(AV) A I 25 RMS V /V 1200 V RRM DRM I 350 A TSM V 16 A, T = 25 C 1.25 V T J dV/dt 500 V/s dI/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS , MAXIMUM PEAK V , MAXIMUM PEAK I / I , V RRM DRM RRM DRM PART NUMBER REVERSE VOLTAGE DIRECT VOLTAGE AT 125 C V V mA VS-25TTS12SLHM3 1200 1200 10 Revision: 22-Feb-18 Document Number: 96123 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-25TTS12SLHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 93 C, 180 conduction half sine wave 16 T(AV) C Maximum RMS on-state current I 25 RMS A 10 ms sine pulse, rated V applied 300 Maximum peak, one-cycle, RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated V applied 450 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 630 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 6300 A s Maximum on-state voltage drop V 16 A, T = 25 C 1.25 V TM J On-state slope resistance r 12.0 m t T = 125 C J Threshold voltage V 1.0 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I / I V = Rated V /V RM DM R RRM DRM T = 125 C 10 J Anode supply = 6 V, mA VS-25TTS08, Holding current I resistive load, initial I = 1 A, - 150 H T VS-25TTS12 T = 25 C J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T max., linear to 80 %, V = R - k = open 500 V/s J J DRM g Maximum rate of rise of turned-on current di/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current +I 1.5 A GM Maximum peak negative gate voltage -V 10 V GM Anode supply = 6 V, resistive load, T = -10 C 60 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 45 mA GT J Anode supply = 6 V, resistive load, T = 125 C 20 J Anode supply = 6 V, resistive load, T = -10 C 2.5 J Maximum required DC gate voltage to trigger V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 22-Feb-18 Document Number: 96123 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000