VS-30TPS12LHM3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 AEC-Q101 qualified (A) Meets JESD 201 class 1A whisker test Flexible solution for reliable AC power rectification 1 Easy control peak current at charger power 2 up to reduce passive / electromechanical components 3 1 (K) (G) 3 TO-247AD 3L Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS On-board and off-board EV / HEV battery chargers I 20 A T(AV) Renewable energy inverters V /V 1200 V DRM RRM DESCRIPTION V 1.3 V TM I 45 mA The VS-30TPS12LHM3 high voltage series of silicon GT controlled rectifiers are specifically designed for medium T -40 C to 125 C J power switching and phase control applications. Package TO-247AD 3L Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 20 T(AV) A I 30 RMS V /V 1200 V RRM DRM I 300 A TSM V 20 A, T = 25 C 1.3 V T J dv/dt 500 V/s di/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS V / V , MAXIMUM V , MAXIMUM RRM DRM RSM I / I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-30TPS12LHM3 1200 1300 10 Revision: 22-Feb-18 Document Number: 96126 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30TPS12LHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 95 C, 180 conduction half sine wave 20 T(AV) C Maximum RMS on-state current I 30 RMS A 10 ms sine pulse, rated V applied 250 RRM Maximum peak, one-cycle I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 310 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 4420 A s Maximum on-state voltage drop V 20 A, T = 25 C 1.3 V TM J On-state slope resistance r 12 m t T = 125 C J Threshold voltage V 1.0 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage I /I V = rated V / V RM DM R RRM DRM current T = 125 C 10 J mA Maximum holding current I Anode supply = 6 V, resistive load, initial I = 1 A, T = 25 C 150 H T J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T maximum, linear to 80 % V , R -k = open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current +I 1.5 A GM Maximum peak negative gate voltage -V 10 V GM Anode supply = 6 V, resistive load, T = - 10 C 60 J Maximum required DC gate current I Anode supply = 6 V, resistive load, T = 25 C 45 mA GT J to trigger Anode supply = 6 V, resistive load, T = 125 C 20 J Anode supply = 6 V, resistive load, T = - 10 C 2.5 J Maximum required DC gate voltage V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J to trigger V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 22-Feb-18 Document Number: 96126 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000