VS-50TPS12LHM3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 50 A FEATURES 2 (A) AEC-Q101 qualified, meets JESD 201 class 1A whisker test Flexible solution for reliable AC power 1 rectification 2 Easy control peak current at charger power 3 up to reduce passive / electromechanical components 1 (K) (G) 3 TO-247AD 3L Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS I 50 A On-board and off-board EV / HEV battery chargers T(AV) V /V 1200 V Renewable energy inverters DRM RRM V (typ.) 1.2 V TM DESCRIPTION I (typ.) 45 mA GT The VS-50TPS12 high voltage series of silicon controlled T max. 150 C J rectifiers are specifically designed for medium power Package TO-247AD 3L switching, and phase control applications. Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V / V 1200 RRM DRM V On-state voltage V 50 A, T = 125 C 1.2 T J Average rectified forward current I 50 T(AV) Maximum continuous RMS on-state current I 79 A RMS Non-repetitive peak surge current I 630 TSM Maximum rate of rise dv/dt 1000 V/s Operating junction and storage temperature range T , T -40 to +150 C J Stg VOLTAGE RATINGS V / V , MAXIMUM V , MAXIMUM RRM DRM RSM I / I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 150 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-50TPS12LHM3 1200 1300 70 Revision: 27-Jul-2018 Document Number: 96108 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-50TPS12LHM3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS Maximum average on-state current I T = 112 C, 180 conduction half sine wave - 50 T(AV) C Maximum continuous RMS on-state I -79 T(RMS) current as AC switch A 10 ms sine pulse, rated V applied -530 RRM Peak, one-cycle non-repetitive surge current I TSM 10 ms sine pulse, no voltage reapplied - 630 Initial T = T J J 10 ms sine pulse, rated V applied maximum - 1405 RRM 2 2 2 I t for fusing I t A s 10 ms sine pulse, no voltage reapplied - 1986 2 2 2 I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied, T = 125 C - 19 850 A s J Low level value of threshold voltage V -0.89 T(TO)1 V High level value of threshold voltage V -0.97 T(TO)2 T = 125 C J Low level value of on-state slope resistance r -6.77 t1 m High level value of on-state slope resistance r -6.32 t2 50 A, T = 25 C 1.2 1.32 J On-state voltage V V T 100 A, T = 25 C 1.4 1.6 J Rate of rise of turned-on current di/dt T = 25 C - 150 A/s J Holding current I -300 H Anode supply = 6 V, resistive load, T = 25 C J Latching current I -350 L mA T = 25 C - 0.05 J Reverse and direct leakage current I /I RRM DRM T = 150 C - 70 J Rate of rise of off-state voltage dv/dt T = T maximum, linear to 80 % V , R -k = 100 -1000 V/s J J DRM g TRIGGERING PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS Peak gate power P -10 GM 10 ms sine pulse, no voltage reapplied W Average gate power P -2.5 G(AV) Peak gate current I -2.5 A GM Peak negative gate voltage -V -10 GM T = -40 C -1.6 J V Required DC gate voltage to trigger V T = 25 C Anode supply = 6 V resistive load - 1.5 GT J T = 150 C - 1 J T = -40 C - 160 J Required DC gate to trigger I T = 25 C Anode supply = 6 V resistive load 45 100 mA GT J T = 150 C - 60 J DC gate voltage not to trigger V -0.2 V GD T = 150 C, V = rated value J DRM DC gate current not to trigger I -3 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS Turn-on time t I = 50 A, V = 50 % V , I = 300 mA, T = 25 C 1.5 - gt T D DRM gt J s I = 50 A, V = 80 % V , dV/dt = 20 V/s, t = 200 s T D DRM p Turn-off time t 92 - q I = 100 mA, dI/dt = 10 A/s, V = 100 V, T = 150 C gt R J Revision: 27-Jul-2018 Document Number: 96108 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000