X-On Electronics has gained recognition as a prominent supplier of VS-50TPS12L-M3 SCRs across the USA, India, Europe, Australia, and various other global locations. VS-50TPS12L-M3 SCRs are a product manufactured by Vishay. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

VS-50TPS12L-M3 Vishay

VS-50TPS12L-M3 electronic component of Vishay
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Part No.VS-50TPS12L-M3
Manufacturer: Vishay
Category: SCRs
Description: Vishay SCRs New Input Thyristor - TO-247-e3
Datasheet: VS-50TPS12L-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.752 ea
Line Total: USD 4.75 
Availability - 326
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
326
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 4.752
10 : USD 4.532
25 : USD 2.915
100 : USD 2.464
250 : USD 2.431
500 : USD 2.398

40
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 5.852
4 : USD 4.466
11 : USD 4.214

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Current Rating
Operating Temperature Range
Type
Cnhts
Hts Code
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Factory Pack Quantity :
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We are delighted to provide the VS-50TPS12L-M3 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-50TPS12L-M3 and other electronic components in the SCRs category and beyond.

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VS-50TPS12L-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 50 A FEATURES 2 (A) Designed and qualified according to JEDEC -JESD 47 150 C maximum operating junction temperature 1 Material categorization: 2 for definitions of compliance please see 3 www.vishay.com/doc 99912 1 (K) (G) 3 TO-247AD 3L APPLICATIONS Typical usage is in input rectification crowbar (soft start) and PRIMARY CHARACTERISTICS AC switch motor control, UPS, welding, and battery charge. I 50 A T(AV) V /V 1200 V DRM RRM DESCRIPTION V (typ.) 1.1 V TM The VS-50TPS12 high voltage series of silicon controlled I (typ.) 40 mA GT rectifiers are specifically designed for medium power T -40 C to +150 C J switching, and phase control applications. The glass Package TO-247AD 3L passivation technology used, has reliable operation up to 150 C junction temperature. Circuit configuration Single SCR MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS V /V 1200 RRM DRM V V 50 A, T = 125 C 1.1 T J I 50 T(AV) I 79 A RMS I 630 TSM dV/dt 1000 V/s T , T -40 to +150 C J Stg VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I /I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-50TPS12L-M3 1200 1300 10 Revision: 10-Aug-2018 Document Number: 95867 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-50TPS12L-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS TYP. MAX. Maximum average on-state current I T = 112 C, 180 conduction half sine wave - 50 T(AV) C Maximum continuous RMS on-state I -79 T(RMS) current as AC switch A 10 ms sine pulse, rated V applied - 530 RRM Peak, one-cycle non-repetitive surge current I TSM 10 ms sine pulse, no voltage reapplied - 630 Initial T = T J J maximum 10 ms sine pulse, rated V applied - 1405 RRM 2 2 2 I t for fusing I t A s 10 ms sine pulse, no voltage reapplied - 1986 2 2 2 I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied, T = 125 C - 19 850 A s J Low level value of threshold voltage V -0.89 T(TO)1 V High level value of threshold voltage V -0.97 T(TO)2 T = 125 C J Low level value of on-state slope resistance r -6.77 t1 m High level value of on-state slope resistance r -6.32 t2 50 A, T = 25 C 1.2 1.32 J On-state voltage V V T 100 A, T = 25 C 1.4 1.6 J Rate of rise of turned-on current dI/dt T = 25 C - 150 A/s J Holding current I - 300 H Anode supply = 6 V, resistive load, T = 25 C J Latching current I - 350 L mA T = 25 C - 0.05 J Reverse and direct leakage current I /I RRM DRM T = 125 C - 10 J Rate of rise of off-state voltage dV/dt T = T maximum, linear to 80 % V , R -k = - 1000 V/s J J DRM g TRIGGERING PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS Peak gate power P -10 GM 10 ms sine pulse, no voltage reapplied W Average gate power P -2.5 G(AV) Peak gate current I -2.5 A GM Peak negative gate voltage -V -10 GM T = -40 C -1.6 J V Required DC gate voltage to trigger V T = 25 C Anode supply = 6 V resistive load - 1.5 GT J T = 150 C - 1 J T = -40 C - 160 J Required DC gate to trigger I T = 25 C Anode supply = 6 V resistive load 45 100 mA GT J T = 150 C - 60 J DC gate voltage not to trigger V -0.2 V GD T = 150 C, V = rated value J DRM DC gate current not to trigger I -3 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Turn-on time t I = 50 A, V = 50 % V , I = 300 mA, T = 25 C 1.5 gt T D DRM gt J s I = 50 A, V = 80 % V , dV/dt = 20 V/s, t = 200 s T D DRM p Turn-off time t 92 q I = 100 mA, dI/dt = 10 A/s, V = 100 V, T = 150 C gt R J Revision: 10-Aug-2018 Document Number: 95867 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
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