X-On Electronics has gained recognition as a prominent supplier of VS-50WQ03FN-M3 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-50WQ03FN-M3 Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-50WQ03FN-M3 Vishay

VS-50WQ03FN-M3 electronic component of Vishay
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Part No.VS-50WQ03FN-M3
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 5.5A 30V Single Die
Datasheet: VS-50WQ03FN-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8395 ea
Line Total: USD 0.84 
Availability - 11322
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1124
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6852
10 : USD 0.5685
30 : USD 0.5091
75 : USD 0.3981
525 : USD 0.3637
975 : USD 0.3464

11322
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8395
10 : USD 0.4968
100 : USD 0.4497
500 : USD 0.3772
1000 : USD 0.3208
3000 : USD 0.3197
6000 : USD 0.2829
9000 : USD 0.2806

97
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 1.484
5 : USD 1.344
18 : USD 1.022
47 : USD 0.966

2231
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 2300
Multiples : 2300
2300 : USD 1.2782

840
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 25
Multiples : 1
25 : USD 0.4194
75 : USD 0.3957
150 : USD 0.3555
525 : USD 0.3259
1050 : USD 0.3227
2025 : USD 0.3212
5025 : USD 0.3103

4344
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 239
Multiples : 1
239 : USD 0.4982

2563
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 23
Multiples : 1
23 : USD 0.3227

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Vr - Reverse Voltage
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We are delighted to provide the VS-50WQ03FN-M3 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-50WQ03FN-M3 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-50WQ03FN-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 5.5 A FEATURES Base cathode Low forward voltage drop 4, 2 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline 1 3 Small foot print, surface mountable D-PAK (TO-252AA) Anode Anode High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C PRODUCT SUMMARY Material categorization: for definitions of compliance Package D-PAK (TO-252AA) please see www.vishay.com/doc 99912 I 5.5 A F(AV) DESCRIPTION V 30 V R The VS-50WQ03FN-M3 surface mount Schottky rectifier V at I See Electrical table F F has been designed for applications requiring low forward I 58 mA at 125 C RM drop and small foot prints on PC board. Typical applications T max. 150 C J are in disk drives, switching power supplies, converters, Diode variation Single die freewheeling diodes, battery charging, and reverse battery protection. E 10 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 5.5 A F(AV) V 30 V RRM I t = 5 s sine 320 A FSM p V 5 A , T = 125 C 0.35 V F pk J T Range -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-50WQ03FN-M3 UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 136 C, rectangular waveform 5.5 A F(AV) C See fig. 5 Following any rated 5 s sine or 3 s rect. pulse 320 Maximum peak one cycle non-repetitive surge current I load condition and with A FSM See fig. 7 10 ms sine or 6 ms rect. pulse 130 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 5 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Nov-16 Document Number: 93311 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-50WQ03FN-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 5 A 0.46 T = 25 C J 10 A 0.53 Maximum forward voltage drop (1) V V FM See fig. 1 5 A 0.35 T = 125 C J 10 A 0.46 T = 25 C 3 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 58 J Threshold voltage V 0.19 V F(TO) T = T maximum J J Forward slope resistance r 22.22 m t Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 590 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 nH S Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, DC operation R 3.0 C/W thJC junction to case See fig. 4 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 50WQ03FN Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93311 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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DLE
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VISHAY / LITE-ON
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Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
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VISHAY DRALORIC
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Vishay Foil Resistors (Division of Vishay Precision Group)
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